2mbi200u2a-060 Fuji Electric holdings CO.,Ltd, 2mbi200u2a-060 Datasheet

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2mbi200u2a-060

Manufacturer Part Number
2mbi200u2a-060
Description
600v / 200a 2 In One-package Igbt Module U-series
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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2MBI200U2A-060
Manufacturer:
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Part Number:
2MBI200U2A-060
Quantity:
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2mbi200u2a-060-50
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2MBI200U2A-060
IGBT Module U-Series
· High speed switching
· Voltage drive
· Low inductance module structure
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*
*
*
Thermal resistance
Contact Thermal resistance
Items
1 :
2 :
3
4
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5)
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
3
Symbols
Symbols
I
I
V
V
(terminal)
V
(chip)
C
t
t
t
t
t
V
(terminal)
V
(chip)
t
R lead
Rth(j-c)
Rth(j-c)
Rth(c-f)*
CES
GES
on
off
f
r
r(i)
rr
GE(th)
CE(sat)
CE(sat)
ies
F
F
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Mounting *
Terminals *
Applications
4
Conditions
V
V
V
V
V
V
I
V
R
V
IGBT
FWD
With thermal compound
C
I
I
F
F
GE
CE
CE
GE
CE
CC
GE
GE
G
=200A
=200A
=200A
Conditions
= 16
=20V, I
=10V, V
=0V, V
=0V, V
=15V, I
=±15V
=0V
=300V
2
2
Symbol
V
V
I
I
-I
-I
P
T
T
V
C
C
stg
C
C
C
j
CES
GES
iso
p
GE
CE
C
C
GE
pulse
=200mA
=200A
=600V
=±20V
=0V, f=1MHz
600V / 200A 2 in one-package
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Conditions
Continuous
AC:1min.
1 device
1ms
Characteristics
Characteristics
Min.
Min.
6.2
2. Equivalent circuit
Typ.
Typ.
Equivalent Circuit Schematic
0.05
14
6.7
2.15
2.40
1.85
2.10
0.40
0.22
0.16
0.48
0.07
1.90
1.95
1.60
1.65
1.39
Rating
-40 to +125
+150
2500
600
±20
200
400
200
400
660
3.5
3.5
Max.
Max.
200
0.19
0.32
1.0
7.7
2.45
1.20
0.60
1.20
0.45
2.30
0.35
Unit
Unit
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
nF
µs
V
µs
m
°C/W
°C/W
°C/W

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2mbi200u2a-060 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 400 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16 , Tj= 25°C 10000 toff 1000 ton 100 10 0 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 25°C 10000 1000 toff 100 10 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 500 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M232 chip 1000 Tj=25 °C Tj=125°C 100 FWD IGBT 0.100 1 ...

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