1N5768_1 MICROSEMI [Microsemi Corporation], 1N5768_1 Datasheet

1N5768_1

Manufacturer Part Number

1N5768_1

Description

Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

Manufacturer

MICROSEMI [Microsemi Corporation]

Datasheet

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01-24-2006 REV B

These low capacitance diode arrays with common cathode are multiple, discrete, isolated

junctions fabricated by a planar process and mounted in a 10-PIN package for use as

steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing

them to the positive side of the power supply line (see figure 1). This circuit application is

further complimented by the 1N5770 (separate data sheet) that has a common anode.

An external TVS diode may be added between the positive supply line and ground to

prevent overvoltage on the supply rail. They may also be used in fast switching core-

driver applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

IMPORTANT: For the most current data, consult MICROSEMI’s website:

•

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25

1N5768

NOTE 1: Each Diode

Hermetic Ceramic Package

Isolated Diodes To Eliminate Cross-Talk Voltages

High Breakdown Voltage V

Low Leakage I

Low Capacitance C < 4.0 pF

Options for screening in accordance with MIL-PRF-

400 mW Power Dissipation per Junction @ 25

500 mW Power Dissipation per Package @ 25

Operating Junction Temperature range –65 to +150

Storage Temperature range of –65 to +200

NOTE 2: Pulsed: P

NOTE 3: Derate at 2.4 mA/

NOTE 4: Derate at 4.0 mW/

NOTE 1: Pulsed: P

NUMBER

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N5768 for a JANTX screen.

FSM

PART

Continuous Forward Current 300 mA (Notes 1 & 3)

Reverse Breakdown Voltage 60 V min (Notes 1 & 2)

Forward Surge Current (tp=1/120 s) 500 mA (Note 1)

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

MAXIMUM RATINGS

< 100nA at 40 V

FORWARD

MAXIMUM

VOLTAGE

S C O T T S D A L E D I V I S I O N

(Note 1)

= 100 mA

FEATURES

Vdc

= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

= 100 ms max; duty cycle <20%

C above +25

> 60 V at 10 μA

DESCRIPTION

FORWARD

MAXIMUM

VOLTAGE

(Note 1)

= 500 mA

Vdc

1.5

C (Note 4)

Scottsdale Division

Microsemi

MAXIMUM

REVERSE

CURRENT

μAdc

0.1

= 40 V

HiRel MQ, MX, MV, and MSP Screening Options

http://www.microsemi.com

•

C unless otherwise specified

CAPACITANCE

•

(PIN TO PIN)

MAXIMUM

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

F = 1 MHz

MECHANICAL AND PACKAGING

Isolated Diode Array with

4.0

10-PIN Ceramic Flat Pack

Weight 0.25 grams (approximate)

Marking: Logo, part number, date code and dot

identifying pin #1

Carrier Tubes; 19 pcs (standard)

= 0 V

APPLICATIONS / BENEFITS

61000-4-2 ESD : Air 15kV, contact 8kW

61000-4-4 (EFT) : 40A – 5/50 ns

61000-4-5 (surge): 12A 8/20 μs

1N5768

RECOVERY TIME

FORWARD

MAXIMUM

= 500 mA

APPEARANCE

10-PIN Ceramic

Flat Pack

RECOVERY TIME

MAXIMUM

REVERSE

= 100 ohms

= 20 mA

= 200 mA

trr

Page 1

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