IDT71128S12YI IDT [Integrated Device Technology], IDT71128S12YI Datasheet
IDT71128S12YI
Related parts for IDT71128S12YI
IDT71128S12YI Summary of contents
Page 1
CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times — Commercial and Industrial: 12/15/20ns One Chip Select plus one Output Enable pin Bidirectional inputs and outputs directly TTL-compatible ...
Page 2
IDT71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout SO32-3 I ...
Page 3
IDT 71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V Output Low Voltage OL V Output High Voltage OH Symbol Parameter Dynamic Operating ...
Page 4
IDT71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout Symbol READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (1) Chip Select to Output in Low-Z t CLZ (1) ...
Page 5
IDT 71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout ADDRESS OE CS DATA OUT SUPPLY CC CURRENT I SB ADDRESS DATA PREVIOUS DATA OUT NOTES HIGH for Read Cycle. 2. Device ...
Page 6
IDT71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout ADDRESS DATA (3) OUT DATA IN ADDRESS DATA IN NOTES write occurs during the overlap of a LOW CS ...
Page 7
IDT 71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout IDT 71128 S XX Device Power Speed Type Commercial and Industrial Temperature Ranges X X Package Process/ Temperature Range 6.42 7 Blank Commercial (0°C to +70°C) I Industrial ...
Page 8
IDT71128 CMOS Static RAM 1 Meg (256K x 4-bit) Revolutionary Pinout 8/5/99 Pg. 3 Pg. 4 Pg. 6 8/13/99 Pg. 8 9/30/99 Pg 2/18/00 Pg. 3 3/14/00 Pg. 3 8/09/00 02/01/01 CORPORATE HEADQUARTERS 2975 Stender Way ...