BR211-240 PHILIPS [NXP Semiconductors], BR211-240 Datasheet

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BR211-240

Manufacturer Part Number
BR211-240
Description
Breakover diodes
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed,
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
applications
overvoltage
telecommunications equipment.
OUTLINE - SOD84
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
August 1996
Breakover diodes
SYMBOL PARAMETER
V
I
I
I
dI
P
P
T
T
T
TSM1
TSM2
2
t
stg
a
vj
D
tot
TM
T
/dt
glass
Continuous voltage
Non repetitive peak current
Non repetitive on-state current
I
Rate of rise of on-state current
after V
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature off-state
Overload junction temperature
capability.
2
t for fusing
include
envelope.
protection
(BO)
turn-on
XXX denotes voltage grade
transient
Typical
These
in
QUICK REFERENCE DATA
SYMBOL
V
I
I
H
TSM
(BO)
CONDITIONS
10/320 s impulse equivalent to
10/700 s, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
t
t
T
t
on-state
p
p
p
j
a
= 10 ms
= 10 s
= 1 ms; T
= 70 ˚C prior to surge
= 25˚C
PARAMETER
Breakover voltage
Holding current
Non-repetitive peak current
1
a
= 25˚C
BR211-140 to 280
SYMBOL
MIN.
-65
-
-
-
-
-
-
-
-
-
MIN.
140
150
Product specification
-
BR211 series
75% of
V
MAX.
150
150
(BO)typ
1.1
1.2
40
15
50
50
70
MAX.
280
40
-
Rev 1.200
UNIT
A/ s
UNIT
A
˚C
˚C
˚C
W
W
mA
V
A
A
2
V
A
s

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BR211-240 Summary of contents

Page 1

... K17) half sine wave ms ˚C prior to surge 25˚ ms 25˚ on-state 1 Product specification BR211 series MIN. MAX. BR211-140 to 280 140 280 150 - 40 SYMBOL MIN. MAX (BO)typ - 1 1 -65 ...

Page 2

... CONDITIONS (BR 100 BR211-140 BR211-160 BR211-180 BR211-200 BR211-220 BR211-240 BR211-260 BR211-280 (BR 25˚ 70˚ 100 85 70˚C D (BR)min j 500 lux (daylight); relative 2 ...

Page 3

... Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents Hz; device triggered at the start of each pulse; T 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 time ) Fig.4. Normalised avalanche breakdown voltage V TSM1 and V 3 Product specification BR211 series MIN. TYP. MAX 2000 - - 100 BR211 I ITSM2 time 10 100 1000 Number of impulses prior to surge. ...

Page 4

... Fig.9. Typical junction capacitance as a function of off-state voltage MHz; T Zth / (K/W) 1000 100 max typ 10 1 min 0.1 100 150 10us Fig.10. Transient thermal impedance Product specification BR211 series min 0 50 100 temperature. BR211-140 typ BR211-280 10 100 25˚C. j BR211 ...

Page 5

... Breakover diodes junction Rth j-e envelope Rth e-tp tie-point Rth tp-a ambient Fig.11. Components of thermal resistance, Rthe a Rthe tp Rthtp a Rth j a Rth j e Rthe a Rthe tp Rthtp a August 1996 Rth e-a Fig.12. Mounting on pcb used for R 5 Product specification BR211 series measurement. th Rev 1.200 ...

Page 6

... Philips Semiconductors Breakover diodes MECHANICAL DATA Dimensions in mm 3.15 max August 1996 5 max 4.3 28 min max Fig.13. SOD84. 6 Product specification BR211 series 0.81 max 28 min Rev 1.200 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 7 Product specification BR211 series Rev 1.200 ...

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