STB160NF3LL_06

Manufacturer Part NumberSTB160NF3LL_06
DescriptionN-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET
ManufacturerSTMICROELECTRONICS [STMicroelectronics]
STB160NF3LL_06 datasheet
 
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General features
Type
V
DSS
STB160NF3LL
30V
1. Value limited by wire bonding
100% avalanche tested
Ultra low on-resistance
Logic level device
Low threshold drive
Description
The STB100NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable fot the most
demanding DC-DC converter applications where
high efficiency is to be achieved.
Applications
Switching application
Order codes
Part number
STB160NF3LL
June 2006
N-channel 30V - 0.0028Ω - 160A - D
STripFET™ III Power MOSFET
R
I
DS(on)
D
(1)
<0.0033Ω
160A
Internal schematic diagram
Marking
B160NF3LL
Rev 2
STB160NF3LL
3
1
2
D
PAK
Package
Packaging
2
D
PAK
Tape & reel
2
PAK
1/13
www.st.com
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STB160NF3LL_06 Summary of contents

  • Page 1

    General features Type V DSS STB160NF3LL 30V 1. Value limited by wire bonding ■ 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device ■ Low threshold drive Description The STB100NH02L utilizes the latest advanced design rules of ST’s ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STB160NF3LL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

  • Page 5

    STB160NF3LL Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STB160NF3LL ...

  • Page 7

    STB160NF3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS ...

  • Page 8

    Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

  • Page 9

    STB160NF3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

  • Page 10

    Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

  • Page 11

    STB160NF3LL 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 ...

  • Page 12

    Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2005 19-Jun-2006 12/13 Revision 1 Preliminary document 2 New template, no content change STB160NF3LL Changes ...

  • Page 13

    STB160NF3LL Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...