STB160NF3LL_06 STMICROELECTRONICS [STMicroelectronics], STB160NF3LL_06 Datasheet - Page 5

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STB160NF3LL_06

Manufacturer Part Number
STB160NF3LL_06
Description
N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
STB160NF3LL
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
100A/µs,
V
(see
SD
SD
DD
= 160A, V
= 160A, di/dt =
= 20V, T
Figure
Test conditions
15)
j
GS
= 150°C
= 0
Min.
Electrical characteristics
Typ.
100
250
6
Max.
160
640
1.3
Unit
nC
ns
A
A
V
A
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