mgf0915a Mitsumi Electronics, Corp., mgf0915a Datasheet

no-image

mgf0915a

Manufacturer Part Number
mgf0915a
Description
Low Noise Gaas Fet
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGF0915A
Manufacturer:
MITSUBISHI
Quantity:
5 000
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
APPLICATION
QUALITY
RECOMMENDED BIAS CONDITIONS
Delivery
*1:
Absolute maximum ratings
Electrical characteristics
Symbol
High output power
High power gain
High power added efficiency
Hermetic Package
For UHF Band power amplifiers
GG
Vds=10V
I
V
gm
Po
G
Rth(ch-c)
Symbol
DSS
V
V
I
I
I
P
Tch
Tstg
GS(off)
add
D
GR
GF
LP
Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
Gp=14.5 dB(TYP.) @f=1.9GHz
Channel to case /
GSO
GDO
T
add=50 %(TYP.) @f=1.9GHz,Pin=23dBm
Gate to source breakdown voltage
Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Saturated drain current
Gate to source cut-off voltage
Power added Efficiency
Output power
Transconductance
Linear Power Gain
Thermal Resistance *1
Ids=800 mA
-01:Tape & Reel(1K), -03:Trai(50pcs)
Above parameters, ratings, limits are subject to change.
Parameter
Parameter
Rg=100
(Ta=25 C)
(Ta=25 C)
V
V
V
V
Pin=23dBm
V
-65 to +175
DS
DS
DS
DS
DS
Vf Method
Ratings
=3V,V
=3V,I
=3V,I
=10V,I
=10V,I
3000
18.7
175
-15
-15
-10
21
Test conditions
D
D
GS
=10mA
=800mA
D
D
=800mA,f=1.9GHz
=800mA,f=1.9GHz
=0V
Unit
L & S BAND GaAs FET
mA
mA
mA
W
V
V
C
C
35.0
13.0
Min.
-1
-
-
-
-
Mitsubishi Electric
MITSUBISHI SEMICONDUCTOR<GaAs FET>
Limits
2400
1000
36.5
14.5
Typ.
50
-3
5
Fig.1
[ SMD non - matched ]
3000
Max.
-5
8
MGF0915A
-
-
-
-
dBm
Unit
mS
mA
C/W
dB
%
V
Jan 2003

Related parts for mgf0915a

mgf0915a Summary of contents

Page 1

... DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm High power gain Gp=14.5 dB(TYP.) @f=1.9GHz High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm Hermetic Package APPLICATION For UHF Band power amplifiers ...

Page 2

... MGF0915A TYPICAL CHARACTERISTICS 40 VDS=10V 35 ID=0.8A 30 f=1.9GHz VD=10V ID=800mA 30 f1=1.90GHz f2=1.91GHz -10 -20 -30 -40 -5 Po,Gp,PAE vs.Pin Pin(dBm) IM3,Po(SCL) vs. Pi(SCL) Po IM3 Pi(SCL) (dBm -10 -20 ...

Page 3

... MGF0915A S PARAMETERS (Ta=25 C, VDS=10V, ID=800mA, Reference Plane see Fig.1) freq. S11 (MHz) (mag) (ang) 600 0.948 -145.92 1000 0.947 -161.85 1400 0.946 -168.94 1800 0.946 -173.55 2200 0.945 -176.72 2600 0.944 -178.89 3000 0.942 178.80 3400 0.939 177.37 3800 0.935 174.73 4200 ...

Related keywords