p2003bvg

Manufacturer Part Numberp2003bvg
DescriptionN-channel Enhancement Mode Field Effect Transistor
ManufacturerNiko Semiconductor Co., Ltd.
p2003bvg datasheet
 
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N-Channel Enhancement Mode Field
NIKO-SEM
PRODUCT SUMMARY
V
R
(BR)DSS
DS(ON)
30
20mΩ
9A
ABSOLUTE MAXIMUM RATINGS (T
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
1
On-State Drain Current
Drain-Source On-State
1
Resistance
REV 1.0
Effect Transistor
D
I
D
G
S
= 25 °C Unless Otherwise Noted)
A
T
= 25 °C
A
T
= 70 °C
A
L = 0.1mH
T
= 25 °C
A
T
= 70 °C
A
SYMBOL
TYPICAL
R
JA
= 25 °C, Unless Otherwise Noted)
J
SYMBOL
TEST CONDITIONS
STATIC
V
V
= 0V, I
(BR)DSS
GS
V
V
= V
GS(th)
DS
GS
I
V
= 0V, V
GSS
DS
V
= 24V, V
DS
I
DSS
V
= 20V, V
DS
GS
I
V
= 5V, V
D(ON)
DS
V
= 4.5V, I
GS
R
DS(ON)
V
= 10V, I
GS
1
P2003BVG
Halogen-Free & Lead-Free
D
D
D
D
G : GATE
D : DRAIN
S : SOURCE
TOP VIEW
100% Rg tested
100% UIS tested
S
S
S
G
SYMBOL
LIMITS
V
30
DS
V
±20
GS
9
I
D
7
I
32
DM
I
18.5
AS
E
17
AS
2.5
P
D
1.6
T
, T
-55 to 150
j
stg
MAXIMUM
50
LIMITS
MIN TYP MAX
30
= 250A
D
1
1.7
, I
= 250A
D
= ±20V
GS
= 0V
GS
= 0V, T
= 55 °C
J
= 10V
32
GS
= 6A
26
D
= 8A
18.4
D
SOP-8
UNITS
V
V
A
mJ
W
°C
UNITS
°C / W
UNIT
V
2.5
±100 nA
1
A
10
A
31
20
Oct-23-2009

p2003bvg Summary of contents

  • Page 1

    ... 0V, V GSS 24V DSS V = 20V 5V, V D(ON 4.5V DS(ON 10V P2003BVG Halogen-Free & Lead-Free GATE D : DRAIN S : SOURCE TOP VIEW 100% Rg tested 100% UIS tested SYMBOL LIMITS ± ...

  • Page 2

    ... Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T Continuous Current 1 Forward Voltage 1 Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003BVG”, DATE CODE or LOT # REV 1.0 Effect Transistor 15V ...

  • Page 3

    ... N-Channel Enhancement Mode Field NIKO-SEM REV 1.0 Effect Transistor 3 P2003BVG SOP-8 Halogen-Free & Lead-Free Oct-23-2009 ...

  • Page 4

    ... Drain-Source Voltage [V] DS REV 1.0 Effect Transistor Single Pulse Maximun Power dissipation 250 200 150 100 50 0 0.001 1ms 10ms 100ms 1S 10S DC 10 100 4 P2003BVG SOP-8 Halogen-Free & Lead-Free SINGLE PULSE R = 50˚ C/W θJA T =25˚ 0.01 0 Sigle Pulse Time (s) Oct-23-2009 ...

  • Page 5

    ... N-Channel Enhancement Mode Field NIKO-SEM REV 1.0 Effect Transistor 5 P2003BVG SOP-8 Halogen-Free & Lead-Free Oct-23-2009 ...