p2003bvg Niko Semiconductor Co., Ltd., p2003bvg Datasheet
p2003bvg
Manufacturer Part Number
p2003bvg
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet
1.P2003BVG.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
P2003BVG
Manufacturer:
NIKOS
Quantity:
100 000
Part Number:
P2003BVG
Manufacturer:
NIKOS
Quantity:
20 000
Part Number:
p2003bvg/P2003BV
Manufacturer:
NIKO-SEM
Quantity:
20 000
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
ELECTRICAL CHARACTERISTICS (T
REV 1.0
PRODUCT SUMMARY
Pulse width limited by maximum junction temperature.
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Avalanche Current
Junction & Storage Temperature Range
Continuous Drain Current
Avalanche Energy
Power Dissipation
Junction-to-Ambient
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
V
(BR)DSS
30
THERMAL RESISTANCE
PARAMETER
1
PARAMETERS/TEST CONDITIONS
R
20mΩ
DS(ON)
1
1
N-Channel Enhancement Mode Field
9A
I
D
A
SYMBOL
= 25 °C Unless Otherwise Noted)
J
V
R
= 25 °C, Unless Otherwise Noted)
V
I
(BR)DSS
I
I
D(ON)
DS(ON)
GS(th)
GSS
DSS
Effect Transistor
T
T
L = 0.1mH
T
T
A
A
A
A
SYMBOL
G
= 25 °C
= 70 °C
= 25 °C
= 70 °C
R
JA
V
STATIC
DS
= 20V, V
V
V
S
V
D
TEST CONDITIONS
V
V
V
DS
DS
V
GS
DS
DS
GS
GS
1
= V
= 0V, V
= 0V, I
= 24V, V
= 5V, V
= 4.5V, I
= 10V, I
TYPICAL
GS
GS
SYMBOL
, I
= 0V, T
T
D
D
GS
V
j
V
E
I
, T
GS
I
P
I
DM
= 250A
AS
= 250A
DS
GS
D
AS
GS
D
D
D
= ±20V
stg
= 10V
= 8A
= 6A
= 0V
D
S
J
TOP VIEW
= 55 °C
D
S
Halogen-Free & Lead-Free
D
S
MAXIMUM
D
G
-55 to 150
50
MIN TYP MAX
LIMITS
30
32
1
18.5
±20
2.5
1.6
30
32
17
9
7
LIMITS
P2003BVG
18.4
100% Rg tested
100% UIS tested
1.7
26
G : GATE
D : DRAIN
S : SOURCE
Oct-23-2009
±100 nA
2.5
10
31
20
1
UNITS
°C / W
UNITS
SOP-8
UNIT
mΩ
mJ
°C
A
W
V
V
A
V
A
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p2003bvg Summary of contents
Page 1
... 0V, V GSS 24V DSS V = 20V 5V, V D(ON 4.5V DS(ON 10V P2003BVG Halogen-Free & Lead-Free GATE D : DRAIN S : SOURCE TOP VIEW 100% Rg tested 100% UIS tested SYMBOL LIMITS ± ...
Page 2
... Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T Continuous Current 1 Forward Voltage 1 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003BVG”, DATE CODE or LOT # REV 1.0 Effect Transistor 15V ...
Page 3
... N-Channel Enhancement Mode Field NIKO-SEM REV 1.0 Effect Transistor 3 P2003BVG SOP-8 Halogen-Free & Lead-Free Oct-23-2009 ...
Page 4
... Drain-Source Voltage [V] DS REV 1.0 Effect Transistor Single Pulse Maximun Power dissipation 250 200 150 100 50 0 0.001 1ms 10ms 100ms 1S 10S DC 10 100 4 P2003BVG SOP-8 Halogen-Free & Lead-Free SINGLE PULSE R = 50˚ C/W θJA T =25˚ 0.01 0 Sigle Pulse Time (s) Oct-23-2009 ...
Page 5
... N-Channel Enhancement Mode Field NIKO-SEM REV 1.0 Effect Transistor 5 P2003BVG SOP-8 Halogen-Free & Lead-Free Oct-23-2009 ...