p2003bvg Niko Semiconductor Co., Ltd., p2003bvg Datasheet - Page 2

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p2003bvg

Manufacturer Part Number
p2003bvg
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet

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NIKO-SEM
1
2
REMARK: THE PRODUCT MARKED WITH “P2003BVG”, DATE CODE or LOT #
REV 1.0
Pulse test : Pulse Width  300 sec, Duty Cycle  2%.
Independent of operating temperature.
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Forward Voltage
2
2
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
2
2
2
1
N-Channel Enhancement Mode Field
Q
Q
g(VGS=4.5V)
g(VGS=10V)
C
t
t
C
V
C
Q
Q
d(on)
d(off)
g
R
I
t
t
oss
rss
S
SD
iss
fs
gs
gd
r
f
Effect Transistor
g
DYNAMIC
I
V
D
V
GS
 1A, V
GS
V
= 0V, V
DS
= 0V, V
V
I
= 0.5V
F
DS
2
= 8A, V
GEN
= 15V, I
V
DS
DD
DS
= 10V, R
(BR)DSS
= 15V, f = 1MHz
= 15V
= 0V, f = 1MHz
GS
D
= 0V
, I
= 8A
D
G
= 8A
= 0.2Ω
Halogen-Free & Lead-Free
J
= 25 °C)
P2003BVG
524
132
2.2
9.7
4.5
1.5
2.3
16
62
11
17
37
20
Oct-23-2009
2.5
1
SOP-8
nC
nS
pF
Ω
S
A
V

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