M1MA174T1D ONSEMI [ON Semiconductor], M1MA174T1D Datasheet

no-image

M1MA174T1D

Manufacturer Part Number
M1MA174T1D
Description
Silicon Switching Diode
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.M1MA174T1D.pdf (8 pages)
MAXIMUM RATINGS
November, 2001 – Rev. 1
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 s
Total Power Dissipation,
T A = 25 C
Derate above 25 C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Thermal Resistance,
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Forward Voltage
Reverse Recovery Time
Semiconductor Components Industries, LLC, 2001
One Diode Loaded
Temperature Range
Junction to Ambient
(I R = 100 Adc)
(V R = 20 Vdc)
(V R = 75 Vdc)
(V R = 0, f = 1.0 MHz)
(I F = 10 mAdc)
(I F = I R = 10 mAdc) (Figure 1)
Characteristic
Characteristic
Rating
Preferred Device
I FM(surge)
Symbol
Symbol
T J , T stg
Symbol
(T A = 25 C unless otherwise noted)
V (BR)
R JA
C T
V F
V R
P D
I R
t rr
I F
Min
100
–
–
–
–
–
–55 to
Value
0.625
+150
Max
100
200
500
200
1.6
Max
5.0
4.0
1.0
4.0
25
–
mW/ C
1
C/mW
Unit
Unit
mW
mA
mA
nAdc
Unit
V
Vdc
Vdc
C
pF
Adc
ns
Preferred devices are recommended choices for future use
and best overall value.
M1MA174T1
Device
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
J6 = Device Code
M
SC–70/SOT–323
Package
1
SC–70
CASE 419
= Date Code
STYLE 2
J6 M
2
Publication Order Number:
3
3000/Tape & Reel
M1MA174T1/D
Shipping

Related parts for M1MA174T1D

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SL24T1
Part Number:
SL24T1
Description:
300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
SL24T1.pdf (8 pages)
NRVBB1060T4G
Part Number:
NRVBB1060T4G
Description:
SWITCHMODE Power Rectifier
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NRVBB1060T4G.pdf (5 pages)
MTD10N10ELT4G
Part Number:
MTD10N10ELT4G
Description:
TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
MTD10N10ELT4G.pdf (7 pages)
NTR4101PT1
Part Number:
NTR4101PT1
Description:
Trench Power MOSFET -20 V, Single P-Channel, SOT-23
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTR4101PT1.pdf (6 pages)
NTD3055-094T4
Part Number:
NTD3055-094T4
Description:
Power MOSFET 12 A, 60 V
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTD3055-094T4.pdf (10 pages)
NTD3055L104T4
Part Number:
NTD3055L104T4
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTD3055L104T4.pdf (8 pages)
NTF2955T1
Part Number:
NTF2955T1
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTF2955T1.pdf (6 pages)
NTF3055-100T3
Part Number:
NTF3055-100T3
Description:
Power MOSFET 3.0 Amps 60 Volts N−Channel
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTF3055-100T3.pdf (6 pages)
NTF3055L175T3LFG
Part Number:
NTF3055L175T3LFG
Description:
Power MOSFET 2.0 A, 60 V, Logic Level
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTF3055L175T3LFG.pdf (6 pages)
MTB2P50ET4
Part Number:
MTB2P50ET4
Description:
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
MTB2P50ET4.pdf (8 pages)
NTB23N03RT4
Part Number:
NTB23N03RT4
Description:
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTB23N03RT4.pdf (6 pages)
NTB25P06T4
Part Number:
NTB25P06T4
Description:
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTB25P06T4.pdf (6 pages)
NTB30N20T4
Part Number:
NTB30N20T4
Description:
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTB30N20T4.pdf (8 pages)
NTB52N10T4
Part Number:
NTB52N10T4
Description:
N-Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTB52N10T4.pdf (8 pages)
NTB60N06T4
Part Number:
NTB60N06T4
Description:
60 V, 60 A, N-Channel TO-220 and D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
NTB60N06T4.pdf (10 pages)

M1MA174T1D Summary of contents

Page 1

Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 s Total Power Dissipation, One Diode Loaded Derate above 25 C Mounted on a Ceramic ...

Page 2

M1MA174T1 Notes 2.0 k variable resistor adjusted for a Forward Current ( mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10 mA. Notes » ...

Page 3

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure ...

Page 4

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of ...

Page 5

M1MA174T1 PACKAGE DIMENSIONS SC–70 (SOT–323) CASE 419–04 ISSUE http://onsemi.com ...

Page 6

Notes M1MA174T1 http://onsemi.com 6 ...

Page 7

Notes M1MA174T1 http://onsemi.com 7 ...

Page 8

Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or ...

Related keywords