SST5114_SOT-23 MICROSS [Micross Components], SST5114_SOT-23 Datasheet

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SST5114_SOT-23

Manufacturer Part Number
SST5114_SOT-23
Description
P-CHANNEL JFET
Manufacturer
MICROSS [Micross Components]
Datasheet
SST5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SST5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SST5114 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
SST5114 Benefits:
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
SST5114 Applications:
Note 1 ‐ Absolute maximum ratings are limiting values above which SST5114 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% 
SYMBOL 
SYMBOL 
SYMBOL 
V
V
r
r
BV
V
I
t
t
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
g
GS(F)
g
e
R
DSS
GSS
R
I
t
t
G
iss
rss
DD
GG
os
GSS
 
 
fs
 
r
f
n
G
L
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Low On Resistance
I
Switches directly from TTL logic
Analog Switches
Commutators
Choppers
D(off)
Click To Buy
Linear Systems replaces discontinued Siliconix SST5114
≤ 500 pA
Drain to Source Saturation Current (Note 2) 
‐15mA 
Gate to Source Breakdown Voltage 
430Ω 
100Ω 
‐10V 
20V 
Gate to Source Forward Voltage 
Drain to Source On Resistance 
Drain to Source On Resistance 
Gate to Source Cutoff Voltage 
Reverse Transfer Capacitance 
Drain to Source On Voltage 
Forward Transconductance 
Turn On Rise Time 
Turn Off Fall Time 
Equivalent Noise Voltage 
CHARACTERISTIC 
Gate Operating Current 
Turn Off Time 
Gate Reverse Current 
Turn On Time 
Output Conductance 
Drain Cutoff Current 
Input Capacitance 
CHARACTERISTIC 
CHARACTERISTIC 
 
 
 
 
 
 
 
 
Tel: +44 1603 788967
Email:
Web:
Available Packages:
SST5114 in SOT-23
SST5114 in bare die.
Please contact Micross for full
package and die dimensions
http://www.micross.com/distribution
chipcomponents@micross.com
 
P-CHANNEL JFET
10 
15 
SST5114
MIN 
MIN 
‐30 
30 
UNITS 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX SST5114 
LOW ON RESISTANCE 
LOW CAPACITANCE 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
ns 
 
 
                                                                                                                 
TYP. 
TYP. 
‐0.7 
‐1.0 
‐0.7 
‐0.5 
‐10 
‐10 
‐10 
4.5 
20 
20 
20 
‐5 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
SOT-23 (Top View)
MAX 
MAX 
‐500 
‐1.3 
500 
‐90 
10 
75 
75 
25 
‐1 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
 
nV/√Hz 
UNITS 
UNITS 
mA 
mS 
pA 
µS 
pF 
Ω 
Ω 
 
 
 
 
 
See Switching Circuit 
CONDITIONS 
V
V
GS
GS
(L) = ‐11V 
(H) = 0V 
 
V
V
V
V
DG
DS
V
V
I
DS
DS
DS
DS
 = ‐15V,  I
 = 10V,  I
= 0A,   V
 = ‐15V, V
 = 0V, V
V
 = 0V, V
 = 0V, V
V
V
V
I
I
SWITCHING TEST CIRCUIT
V
V
V
V
V
V
DS
I
DS
DS
GS
DS
DS
DS
GS 
GS
GS
= ‐1mA,   V
= ‐1mA,   V
 = ‐15V,  I
= 1µA,   V
 = ‐15V, V
 = ‐15V, I
 = 0V, I
 = ‐18V, V
 = ‐15V, V
 = ‐15V, V
CONDITIONS 
CONDITIONS 
 = 0V, I
 = 0V, I
= 20V,  V
GS 
GS
D
GS 
GS 
D
 = 10mA , f = 1kHz 
GS 
 = 1mA , f = 1kHz 
 = 0V,   f = 1kHz 
= 12V, f = 1MHz 
‐55°C to +200°C 
‐55°C to +200°C 
= 7V, f = 1MHz 
= 5V, f = 1MHz 
D
= 0V, f = 1MHz 
D
D
r
 = ‐15mA 
I
V
 = ‐7mA 
 = ‐3mA 
V
DS(on) 
D
D
G
DS
GS 
500mW 
DS
 = ‐1mA 
 = ‐50mA 
GDS
GSS
 = ‐1nA 
DS
GS 
GS 
GS 
GS
 = 0V 
 = 0V 
= 12V 
6pF 
 = 0V 
 = 0V 
= 0V 
= 7V 
= 5V 
 = 30V 
 = 30V 
≤ 75Ω 

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