hy5du561622ct Hynix Semiconductor, hy5du561622ct Datasheet

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hy5du561622ct

Manufacturer Part Number
hy5du561622ct
Description
256m 16mx16 Gddr Sdram
Manufacturer
Hynix Semiconductor
Datasheet

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HY5DU561622CT
256M(16Mx16) gDDR SDRAM
HY5DU561622CT
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.3 / Feb. 2006
1

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hy5du561622ct Summary of contents

Page 1

... HY5DU561622CT 256M(16Mx16) gDDR SDRAM This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.3 / Feb. 2006 HY5DU561622CT 1 ...

Page 2

... Defined IDD Spec. 0.2 Improvement of VDD from 2.8V to 2.5V in 300MHz 0.3 Changed IDD Spec. 0.4 166MHz Speed added. 0.5 1) Changed VDD Value of HY5DU561622CT-33/36 from 2.5V to 2.6V 0.6 2) Added tRC@Auto Precharge Parameter in AC CHARACTERISTICS - I Added 350MHz Speed 0.7 Changed VDD/VDDQ min/max range of HY5DU561622CT- 33 /36 0.8 1) Changed tRAS_max Value from 120K to 100K in All Frequency 2) Changed IDD6 value from 3mA to 4mA in All Frequency 0 ...

Page 3

... DESCRIPTION The Hynix HY5DU561622CT is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 16Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it ...

Page 4

... Pin Pitch ROW and COLUMN ADDRESS TABLE Items Organization Row Address Column Address Bank Address Refresh 1HY5DU561622CT DQ15 64 V SSQ 63 DQ14 62 DQ13 61 V DDQ 60 DQ12 59 DQ11 58 V SSQ 57 DQ10 56 DQ9 ...

Page 5

... Used to capture write data. LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15. Data input / output pin : Data Bus Power supply for internal circuits and input buffers. Power supply for output buffers for noise immunity. Reference voltage for inputs for SSTL interface. No connection. 1HY5DU561622CT 5 ...

Page 6

... Write Data Register 2-bit Prefetch Unit Bank 4Mx16/Bank0 Control 4Mx16 /Bank1 4Mx16 /Bank2 4Mx16 /Bank3 Mode Row Register Decoder Column Decoder Column Address Counter CLK, DLL /CLK Block Mode Register 1HY5DU561622CT LDQS,UDQS Data Strobe CLK_DLL Transmitter Data Strobe DS Receiver DS DQ[0:15] 6 ...

Page 7

... 1HY5DU561622CT A10/ CAS WE ADDR code code ...

Page 8

... Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data. 2. LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively. Rev. 1.3 / Feb. 2006 CKEn /CS, /RAS, /CAS, / 1HY5DU561622CT A10/ LDM UDM ADDR ...

Page 9

... OPCODE BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP 1HY5DU561622CT Command Action DSEL NOP or power down NOP NOP or power down BST ILLEGAL ILLEGAL ILLEGAL ACT Row Activation PRE/PALL NOP AREF/SREF Auto Refresh or Self Refresh MRS Mode Register Set ...

Page 10

... BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP OPCODE 1HY5DU561622CT Command Action ACT ILLEGAL PRE/PALL Term burst, precharge AREF/SREF ILLEGAL MRS ILLEGAL DSEL Continue burst to end NOP Continue burst to end BST ILLEGAL ILLEGAL ILLEGAL ACT ILLEGAL ...

Page 11

... OPCODE BA, CA, AP READ/READAP 1HY5DU561622CT Command Action DSEL NOP - Enter ROW ACT after tRCD NOP NOP - Enter ROW ACT after tRCD BST ILLEGAL ILLEGAL ILLEGAL ACT ILLEGAL PRE/PALL ILLEGAL AREF/SREF ILLEGAL MRS ILLEGAL DSEL ...

Page 12

... H BA, CA, AP READ/READAP L L BA, CA, AP WRITE/WRITEAP OPCODE 1HY5DU561622CT Command Action ILLEGAL ACT ILLEGAL PRE/PALL ILLEGAL AREF/SREF ILLEGAL MRS ILLEGAL DSEL NOP - Enter IDLE after tMRD NOP NOP - Enter IDLE after tMRD BST ILLEGAL ILLEGAL ILLEGAL ...

Page 13

... 1HY5DU561622CT /ADD Action X INVALID X Exit self refresh, enter idle after tSREX X Exit self refresh, enter idle after tSREX X ILLEGAL X ILLEGAL X ILLEGAL X NOP, continue self refresh X INVALID X Exit power down, enter idle ...

Page 14

... IDLE SREX PDEN PDEX AREF ACT POWER DOWN PDEN PDEX BANK ACTIVE WRITE READ WITH WITH AUTOPRE- AUTOPRE- CHARGE CHARGE WRITE PRE- CHARGE POWER-UP POWER APPLIED 1HY5DU561622CT SELF REFRESH AUTO REFRESH BST READ READAP READ WRITEAP PRE(PALL) Command Input Automatic Sequence 14 ...

Page 15

... Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200 cycles(tXSRD) of clock are required for locking DLL) 6. Issue Precharge commands for all banks of the device. Rev. 1.3 / Feb. 2006 Sequencing Voltage relationship to avoid latch-up After or with VDD After or with VDDQ After or with VDDQ 1HY5DU561622CT < VDD + 0.3V < VDDQ + 0.3V < VDDQ + 0.3V 15 ...

Page 16

... CODE CODE CODE tRP tMRD tMRD EMRS Set MRS Set Precharge All Precharge All Reset DLL (with A8=H) * 200 cycle(tXSRD are required (for DLL locking) before Read Command 1HY5DU561622CT AREF MRS ACT CODE CODE CODE CODE CODE CODE tRP tRFC tMRD ...

Page 17

... Yes CAS Latency Reserved Reserved Reserved Reserved Reserved 1HY5DU561622CT Burst Length Burst Length Sequential Reserved Reserved Reserved 1 ...

Page 18

... Interleave ...

Page 19

... OUTPUT DRIVER IMPEDANCE CONTROL The HY5DU561622CT supports Full, Half strength driver and Matched impedance driver, intended for lighter load and/ or point-to-point environments. The Full drive strength for all output is specified to be SSTL_2, CLASS II. Half strength driver is to define about 50% of Full drive strength and Matched impedance driver, about 30% of Full drive strength ...

Page 20

... RFU* BA0 MRS Type 0 MRS 1 EMRS * All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. Rev. 1.3 / Feb. 2006 1HY5DU561622CT RFU* DS DLL A0 DLL enable 0 Enable 1 Diable A6 A1 Output Driver Impedance Control ...

Page 21

... DDQ ± the dc value. (TA=0 to 70oC, Voltage referenced to V Symbol Min 0. 0V disabled OUT 1HY5DU561622CT Rating -55 ~ 125 -0.5 ~ 3.6 -0.5 ~ 3.6 -0 260 ⋅ 0V) SS Max Unit 2.5 2.625 V 2.6 2.9 V 2.8 2.9 V 2.5 2.625 V 2 ...

Page 22

... All banks active DD5 Current Self Refresh CKE=<0.2V; External clock on; I DD6 Current tCK=tCK(min) Rev. 1.3 / Feb. 2006 o (TA Voltage referenced to V Test Condition 28 180 100 45 110 260 240 1HY5DU561622CT = 0V) SS Speed 180 170 160 150 150 20 100 ...

Page 23

... C, Voltage referenced to V Symbol Min 0.35 IH(AC) REF V IL(AC) V 0.7 ID(AC) V 0.5*V IX(AC) DDQ of the transmitting device and must track variations in the DC level of the same. DDQ o (TA Voltage referenced to VSS = 0V 1HY5DU561622CT = 0V) SS Max Unit 0.35 V REF V + 0.6 V DDQ -0.2 0.5*V +0.2 V DDQ Value Unit V x 0.5 V DDQ ...

Page 24

... DRL DAL 2.8 7 0.45 0. 0.45 0. -0.7 0 -0.7 0.7 DQSCK t - 0.4 DQSQ t HPmin QHS t CH min t - 0.4 QHS 0.4 0.6 DQSH t 0.4 0.6 DQSL t 0.85 1.15 DQSS 0 1HY5DU561622CT 33 36 Min Max Min Max 70K 40 70K 3.3 7.0 3.6 7 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 -0.7 ...

Page 25

... Rev. 1.3 / Feb. 2006 28 Symbol Min Max 0 0.9 1.1 RPRE t 0.4 0.6 RPST WPRES t 1.5 - WPREH t 0.4 0.6 WPST MRD t 200 - XSC 1tCK t - PDEX + tIS 2tCK tPDEX_RD - + tIS t - 7.8 REFI 1HY5DU561622CT 33 36 Min Max Min Max 0.4 - 0.4 - 0.9 1.1 0.9 1.1 0.4 0.6 0.4 0 1.5 - 1.5 - 0.4 0.6 0.4 0 200 - 200 - 1tCK 1tCK - - + tIS + tIS 2tCK 2tCK - - + tIS ...

Page 26

... DRL DAL 4.0 7 0.45 0. 0.45 0. -0.7 0 -0.7 0.7 DQSCK t - 0.4 DQSQ t HPmin QHS t CH min t - 0.4 QHS 0.4 0.6 DQSH t 0.4 0.6 DQSL t 0.85 1.15 DQSS 0 1HY5DU561622CT 5 6 Min Max Min Max 70K 40 70K 5.0 7.0 6.0 7.0 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 -0 ...

Page 27

... Symbol Min Max Min t 0 0.9 1.1 RPRE t 0.4 0.6 RPST WPRES t 1.5 - WPREH t 0.4 0.6 WPST MRD 200 - XSC 1tCK 1tCK t - PDEX + tIS + tIS 2tCK 2tCK tPDEX_RD - + tIS + tIS t - 7.8 REFI 1HY5DU561622CT 5 6 Max Min Max 0.4 - 0.4 - 0.9 1.1 0.9 1.1 0.4 0.6 0.4 0 1.5 - 1.5 - 0.4 0.6 0.4 0 200 - 200 - 1tCK - - + tIS 2tCK - - + tIS - 7.8 - 7.8 Unit Note ...

Page 28

... Rev. 1.3 / Feb. 2006 tRC_APCG tRFC tRAS (AUTO Precharge 40ns 16 22 40ns 18 20 40ns 17 18 40ns 14 14 40ns 11 12 40ns 1HY5DU561622CT tRCDRD tRCDWR tRP tDAL Unit ...

Page 29

... These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT Output Rev. 1.3 / Feb. 2006 Pin CK, CK All other input-only pins DQ, DQS /2, V peak-to-peak = 0.2V O DDQ =50 Ω Zo=50 Ω V REF C =30pF L 1HY5DU561622CT Symbol Min Max Unit C 2.0 3 2.0 3 4.0 5 ...

Page 30

... Note : Package do not mold protrusion. Allowable protrusion of both sides is 0.4mm. Rev. 1.3 / Feb. 2006 BASE PLANE 22.33 (0.879) 22.12 (0.871) 0.35 (0.0138) 0.25 (0.0098) SEATING PLANE 0.15 (0.0059) 0.05 (0.0020) 1HY5DU561622CT Unit : mm(Inch) 11.94 (0.470) 11.79 (0.462) 10.26 (0.404) 10.05 (0.396 Deg. 0.597 (0.0235) 0.210 (0.0083) 0.406 (0.0160) 0.120 (0.0047) ...

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