mjd31ctf-sbdd001a Fairchild Semiconductor, mjd31ctf-sbdd001a Datasheet

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mjd31ctf-sbdd001a

Manufacturer Part Number
mjd31ctf-sbdd001a
Description
Mjd31/31c Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
P
h
V
V
V
I
I
I
T
T
V
I
I
I
V
V
f
C
CP
B
CEO
CES
EBO
T
FE
C
J
STG
CBO
CEO
EBO
CEO
CE
BE
Symbol
Symbol
(on)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
a
C
T
=25 C)
=25 C)
: MJD31
: MJD31C
: MJDH31
: MJD31C
C
: MJD31
: MJD31C
: MJD31
: MJD31C
: MJD31
: MJD31C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJD31/31C
V
V
I
V
V
V
V
V
I
V
V
C
C
CE
CE
CE
CE
BE
CE
CE
CE
CE
= 30mA, I
= 3A, I
= 40V, I
= 40V, V
= 5V, I
= 60V, I
= 4V, I
= 4V, I
= 4A, I
= 10V, I
= 100V, V
Test Condition
1
B
= 375mA
C
C
C
C
B
B
B
C
BE
= 0
= 1A
= 3A
= 3A
= 0
= 0
= 0
= 500mA
BE
= 0
1.Base
= 0
D-PAK
2.Collector
- 65 ~ 150
Value
1.56
100
100
150
40
40
15
1
1
5
3
1
Min.
100
40
25
10
3
3.Emitter
Max.
1.2
1.8
50
20
50
20
50
1
I-PAK
Rev. A2, June 2001
Units
W
W
V
V
V
V
A
A
Units
V
A
MHz
C
C
mA
V
V
V
V
A
A
A
A

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mjd31ctf-sbdd001a Summary of contents

Page 1

... EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD31/31C 1 T =25 C unless otherwise noted C Parameter : MJD31 : MJD31C : MJDH31 : MJD31C = = =25 C unless otherwise noted ...

Page 2

... V [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Capacitance t STG =30V (off)=10V F CC 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation 0.1 0.01 1E Figure 2. Base-Emitter Saturation Voltage 1 0.1 0.01 10 100 10.I I (max (max) ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2001 ...

Page 4

... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A2, June 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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