2SK1119_09 TOSHIBA [Toshiba Semiconductor], 2SK1119_09 Datasheet
2SK1119_09
Manufacturer Part Number
2SK1119_09
Description
DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK1119_09.pdf
(6 pages)
DC−DC Converter and Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII
GS
DC
Pulse (Note 1)
= 20 kΩ)
: I
: V
(Note 1)
DSS
th
= 1.5 to 3.5 V (V
= 300 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK1119
fs
| = 2.0 S (typ.)
DS
= 3.0 Ω (typ.)
= 10 V, I
DS
−55 to 150
Rating
1000
1000
Max
1.25
83.3
±20
100
150
= 800 V)
12
4
1
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 2.0 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
2-10P1B
.5
SC-46
)
2009-09-29
2SK1119
Unit: mm
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2SK1119_09 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V = 1 ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
Page 3
3 2SK1119 2009-09-29 ...
Page 4
4 2SK1119 2009-09-29 ...
Page 5
5 2SK1119 2009-09-29 ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...