IRF7707PBF IRF [International Rectifier], IRF7707PBF Datasheet

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IRF7707PBF

Manufacturer Part Number
IRF7707PBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet
Thermal Resistance
l
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
θJA
@ T
@ T
, T
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Gate-to-Source Voltage
Linear Derating Factor
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
provides thedesigner

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
2
3
4
1
1 = D
4 = G
2 = S
3 = S
V
-20V
DSS
G
D
S
HEXFET
22mΩ@V
33mΩ@V
8 = D
7 = S
5 = D
6 = S
IRF7707PbF
R
-55 to +150
8
7
6
5
Max.
DS(on)
83
Max.
0.01
-7.0
-5.7
-20
-28
1.5
1.0
±12
®
GS
GS
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD-96024
-
-
7.0A
6.0A
Units
Units
I
01/04/06
W/°C
°C/W
D
°C
W
W
V
V
A
1

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IRF7707PBF Summary of contents

Page 1

... Maximum Junction-to-Ambient θJA www.irf.com HEXFET V DSS -20V -4. -4.5V GS  ƒ ƒ ƒ PD-96024 IRF7707PbF ® Power MOSFET R max I DS(on) D 22mΩ@V = -4.5V 7. 33mΩ@V = -2.5V 6. TSSOP Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° 20µs ...

Page 4

1MHz iss rss 2800 oss iss 2100 1400 C oss 700 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

-7.0A 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...

Page 7

E INDEX MARK ccc e bbb aaa C 8 SURF LEAD AS S IGNMENT ...

Page 8

EXAMPLE: T HIS IS AN IRF7702 DAT E CODE (YWW) TSSOP-8 Tape and Reel Information FEED DIRECT ION WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 PART NUMBER 7702 LOT CODE ...

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