2SK1516 HITACHI [Hitachi Semiconductor], 2SK1516 Datasheet
2SK1516
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2SK1516 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (t Suitable for motor control, switching regulator, DC-DC converter Outline = 120 ns) rr TO- Gate 2. Drain (Flange) 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
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... V — 1.0 — — 120 — rr 2SK1515, 2SK1516 Unit Test conditions mA 100 360 400 ...
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... Power vs. Temperature Derating 120 Case Temperature T Typical Output Characteristics Drain to Source Voltage 0.5 0.2 0.1 0.05 100 150 (° Pulse Test (V) DS Maximum Safe Operation Area 2SK1515 Ta = 25° ...
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... V Pulse Test 0.5 120 160 0.1 (°C) C 2SK1515, 2SK1516 Static Drain to Source on State Resistance vs. Drain Current Pulse Test Drain Current I (A) D Forward Transfer Admittance vs. Drain Current = –25°C C 25°C 75° ...
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... Body to Drain Diode Reverse Recovery Time 5,000 di/dt = 100 25° 2,000 GS Pulse Test 1,000 500 200 100 50 0.2 0 Reverse Drain Current I Dynamic Input Characteristics 500 V = 100 V DD 400 V DS 300 200 V = 400 V 100 DD 250 V 100 Gate Charge Qg (nc) ...
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... Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin 10 Vout (on) 2SK1515, 2SK1516 2 25°C C ch–c (t) = (t) · ch–c S ch–c = 1.25°C/ 25° Waveforms 90% 10% 10% 90% 90% ...
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Max 0.9 3.6 1.0 5.45 0.5 4.8 0.2 1.0 0.2 0.6 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 1.5 2.8 0.2 TO-3P — Conforms 5.0 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...