2SK176 HITACHI [Hitachi Semiconductor], 2SK176 Datasheet

no-image

2SK176

Manufacturer Part Number
2SK176
Description
Silicon N-Channel MOS FET
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK176
Manufacturer:
IR
Quantity:
24
Part Number:
2SK1760
Manufacturer:
NEC
Quantity:
15 000
Part Number:
2SK1760
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK1760
Manufacturer:
FUJ
Quantity:
20 000
Part Number:
2SK1761
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Part Number:
2SK1762
Manufacturer:
SANKEN
Quantity:
2 000
Part Number:
2SK1764
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
2SK1764KYTL
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
2SK1764KYTL
Manufacturer:
RENESAS
Quantity:
13 620
Part Number:
2SK1764KYTR
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
2SK1764KYTR-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Silicon N-Channel MOS FET
TO-220AB
G
2SK1761
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

Related parts for 2SK176

2SK176 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline 2SK1761 TO-220AB Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS V GSS ...

Page 3

... V — 1.0 — — 200 — rr 2SK1761 Unit Test Conditions mA 100 200 mA ...

Page 4

... Power vs. Temperature Derating 160 120 100 Case Temperature Typical Output Characteristics Drain to Source Voltage V 4 100 0.3 0.1 1 150 200 Tc (°C) 10 Pulse Test (V) DS Maximum Safe Operation Area Ta = 25° ...

Page 5

... Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 0.1 0. Forward Transfer Admittance vs. Drain Current Pulse Test 0.5 160 0.1 0.2 Drain Current I (A) 2SK1761 Drain Current I ( –25°C 75°C 25°C 0 ...

Page 6

... Body to Drain Diode Reverse Recovery Time 500 100 25°C GS 200 100 0.2 0 Reverse Drain Current I Dynamic Input Characteristics 500 400 300 V DS 200 100 V = 200 V DD 100 Gate Charge Qg (nc) ...

Page 7

... Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 100 to Drain Voltage – 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 Pulse Width PW (S) 2SK1761 2 25° – c(t) = s(t) ch – – 1.67° 25° ...

Page 8

MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...

Page 9

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

Related keywords