IRLR024_09 VISHAY [Vishay Siliconix], IRLR024_09 Datasheet

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IRLR024_09

Manufacturer Part Number
IRLR024_09
Description
Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91322
S-82993-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(TO-252)
D
(Max.) (nC)
(nC)
(nC)
DPAK
(V)
≤ 17 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 541 µH, R
G
c
D S
DD
b
V
GS
≤ V
DPAK (TO-252)
IRLR024PbF
SiHLR024-E3
IRLR024
SiHLR024
e
= 5.0 V
DS
G
, T
e
N-Channel MOSFET
J
Single
≤ 150 °C.
4.5
60
18
12
G
= 25 Ω, I
D
S
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.10
IRLR024, IRLU024, SiHLR024, SiHLU024
GS
AS
at 5.0 V
= 14 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRLR024TRPbF
SiHLR024T-E3
IRLR024TR
SiHLR024T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR024/SiHLR024)
• Straight Lead (IRLU024/SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DS(on)
a
a
Specified at V
SYMBOL
a
T
a
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
design,
GS
= 4 V and 5 V
- 55 to + 150
IPAK (TO-251)
IRLU024PbF
SiHLU024-E3
IRLU024
SiHLU024
LIMIT
0.020
260
± 10
0.33
9.2
2.5
4.5
60
14
56
91
42
low
d
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRLR024_09 Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω 5.0 V DS(on (Max.) (nC (nC (nC) gd Configuration DPAK IPAK (TO-252) (TO-251 ORDERING INFORMATION Package DPAK ...

Page 2

IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 = 25 °C Fig Typical Transfer Characteristics ...

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IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 Pulse width ≤ 1 µs Duty ...

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IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit ...

Page 7

D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...

Page 8

TO-252AA (HIGH VOLTAGE) D1 DIM. MIN. E 6. 0.89 L4 0.64 D 6.00 H 9.40 b 0.64 b2 0. 2.20 A1 0.00 c 0.45 c2 0.45 D1 5.30 E1 4.40 θ ...

Page 9

TO-251AA (HIGH VOLTAGE Thermal PAD D1 4 (Datum A) View MILLIMETERS DIM. MIN. MAX. A 2.18 2.39 A1 0.89 1.14 b 0.64 0.89 b1 0.65 0.79 b2 0.76 1.14 b3 0.76 1.04 b4 4.95 5.46 ...

Page 10

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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