SI4434DY-E3 VISHAY [Vishay Siliconix], SI4434DY-E3 Datasheet
SI4434DY-E3
Related parts for SI4434DY-E3
SI4434DY-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4434DY—E3 Si4434DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
Page 2
... Si4434DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
Page 3
... Source-to-Drain Voltage (V) SD Document Number: 72562 S-32556—Rev. B, 15-Dec-03 New Product 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4434DY Vishay Siliconix Capacitance C iss C oss 500 C rss 100 150 V − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
Page 4
... Si4434DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0 250 mA D 0.0 −0.5 −1.0 −1.5 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 125 ...
Page 5
... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72562 S-32556—Rev. B, 15-Dec-03 New Product Normalized Thermal Transient Impedance, Junction-to-Foot −2 − Square Wave Pulse Duration (sec) Si4434DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...