SI4473BDY-E3 VISHAY [Vishay Siliconix], SI4473BDY-E3 Datasheet

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SI4473BDY-E3

Manufacturer Part Number
SI4473BDY-E3
Description
P-Channel 14-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72691
S-32676—Rev. A, 29-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−14
−14
Ordering Information: Si4473BDY—E3 (lLead Free)
(V)
J
ti
t A bi
0.018 @ V
0.011 @ V
J
J
a
a
G
S
S
S
Si4473BDY-T1—E3 (Lead Free with Tape and Reel)
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
4
GS
GS
a
a
= −2.5 V
= −4.5 V
Top View
(W)
P-Channel 14-V (D-S) MOSFET
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−13
−10
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
G
stg
P-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 100% R
APPLICATION
D Battery Switch for Portable Devices
S
D
10 secs
Typical
−9.9
−2.3
−13
2.5
1.6
40
70
15
g
Tested
−55 to 150
"12
−14
−50
Steady State
Maximum
Vishay Siliconix
−1.34
−9.8
−7.8
0.94
1.5
50
85
18
Si4473BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4473BDY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4473BDY—E3 (lLead Free) Si4473BDY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4473BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... New Product 6400 5600 4800 4000 3200 2400 = 4.5 V 1600 0.060 0.050 0.040 0.030 0.020 T = 25_C J 0.010 0.000 0.8 1.0 1.2 Si4473BDY Vishay Siliconix Capacitance C iss C C rss 800 − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si4473BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 125 150 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72691 S-32676—Rev. A, 29-Dec-03 New Product −2 − Square Wave Pulse Duration (sec) Si4473BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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