31DQ10G-M3 VISHAY [Vishay Siliconix], 31DQ10G-M3 Datasheet

no-image

31DQ10G-M3

Manufacturer Part Number
31DQ10G-M3
Description
Schottky Rectifier, 3.3 A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.31DQ10G-M3.pdf (6 pages)
Revision: 19-Sep-11
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current, T
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
F(AV)
FSM
J
RRM
F
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
Package
I
T
RM
V
J
I
F
F(AV)
E
V
max.
at I
max.
AS
R
C-16
www.vishay.com
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
F
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Rectangular waveform
t
3 Apk, T
J
p
SYMBOL
= 25 °C
= 5 μs sine
V
RWM
V
R
CHARACTERISTICS
See Electrical table
J
DO-201AD (C-16)
3.0 mA at 125 °C
= 25 °C
Cathode
90 V, 100 V
SYMBOL
Schottky Rectifier, 3.3 A
Single die
150 °C
3.0 mJ
I
I
3.3 A
E
F(AV)
FSM
I
VS-31DQ09G
AR
AS
90
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
Anode
= 25 °C, I
VS-31DQ09G-M3
AS
1
= 1 A, 18 μs square pulse
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High
• Guard ring for enhanced ruggedness and
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
The VS-31DQ..G... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
TEST CONDITIONS
90
encapsulation
strength and moisture resistance
long termreliability
(-M3 only)
C
= 53.4 °C, rectangular waveform
J
maximum V
purity,
www.vishay.com/doc?91000
- 40 to 150
VALUES
90/100
0.85
370
Following any rated load
condition and with rated
V
3.3
VS-31DQ10G
RRM
A
= 1.5 x V
high
forenhanced
100
applied
Vishay Semiconductors
temperature
R
typical
DiodesEurope@vishay.com
VS-31DQ10G-M3
mechanical
Document Number: 93322
VALUES
100
epoxy
370
3.3
3.0
0.5
60
UNITS
°C
A
V
A
V
UNITS
UNITS
mJ
A
A
V

Related parts for 31DQ10G-M3

Image
Part Number
Description
Manufacturer
Datasheet
Request R
ESH1PB-E385A
Part Number:
ESH1PB-E385A
Description:
Vishay General Semiconductor
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
ESH1PB-E385A.pdf (4 pages)
GSOT05C-HT3
Part Number:
GSOT05C-HT3
Description:
Vishay Semiconductors
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
GSOT05C-HT3.pdf (5 pages)
RG4D
Part Number:
RG4D
Description:
Vishay Semiconductors
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
RG4D.pdf (6 pages)
si7884bdp
Part Number:
si7884bdp
Description:
Vishay Siliconix
Manufacturer:
Vishay
Datasheet:
SI7884BDP.pdf (7 pages)
S07M
Part Number:
S07M
Description:
Small Surface Mount Diodes
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
S07M.pdf (6 pages)
1N5418
Part Number:
1N5418
Description:
Fast Silicon Mesa Rectifiers
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
1N5418.pdf (4 pages)
DG2011DX-T1
Part Number:
DG2011DX-T1
Description:
Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
DG2011DX-T1.pdf (7 pages)
DG211BDQ
Part Number:
DG211BDQ
Description:
Improved Quad CMOS Analog Switches
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
DG211BDQ.pdf (8 pages)
DG2301DL
Part Number:
DG2301DL
Description:
High-Speed, Low rON, SPST Analog Switch
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
DG2301DL.pdf (5 pages)
SI4473BDY-E3
Part Number:
SI4473BDY-E3
Description:
P-Channel 14-V (D-S) MOSFET
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI4473BDY-E3.pdf (5 pages)
SI4484EY-T1
Part Number:
SI4484EY-T1
Description:
N-Channel 100-V (D-S) MOSFET
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI4484EY-T1.pdf (4 pages)
SI4736DY
Part Number:
SI4736DY
Description:
N-Channel 30-V (D-S) MOSFET With Schottky Diode
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI4736DY.pdf (3 pages)
SI4814BDY
Part Number:
SI4814BDY
Description:
Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI4814BDY.pdf (2 pages)
SI4955DY-T1-E3
Part Number:
SI4955DY-T1-E3
Description:
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI4955DY-T1-E3.pdf (9 pages)
SI1303DL-T1
Part Number:
SI1303DL-T1
Description:
P-Channel 2.5-V (G-S) MOSFET
Manufacturer:
VISHAY [Vishay Siliconix]
Datasheet:
SI1303DL-T1.pdf (5 pages)

31DQ10G-M3 Summary of contents

Page 1

... VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com Cathode C-16 PRODUCT SUMMARY Package DO-201AD (C-16) I F(AV See Electrical table max. 3 125 ° max. J Diode variation E AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS I Rectangular waveform F(AV) V RRM μs sine FSM Apk ° ...

Page 2

... VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of charge Note (1) Pulse width < 300 μs, duty cycle < THERMAL - MECHANICAL SPECIFICATIONS ...

Page 3

... VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com 0.1 0 0.3 0 Forward Voltage Drop (V) 93322_01 FM Fig Maximum Forward Voltage Drop Characteristics 150 ° 125 °C J 0.1 0.01 0.001 0.0001 ° Reverse Voltage (V) 93322_02 R Fig Typical Values of Reverse Current vs. Reverse Voltage ...

Page 4

... VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com ORDERING INFORMATION TABLE VS- Device code ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-31DQ09G 500 VS-31DQ09GTR 1200 VS-31DQ09G-M3 500 VS-31DQ09GTR-M3 1200 VS-31DQ10G 500 VS-31DQ10GTR 1200 VS-31DQ10G-M3 500 VS-31DQ10GTR-M3 1200 Dimensions Part marking information Packaging information ...

Page 5

DIMENSIONS in millimeters (inches) 21.0 (0.83) MIN. (2 places) 10.0 (0.39) Ø 1.40 (0.055) Ø 1.20 (0.047) (2 places) Revision: 29-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS ...

Page 6

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

Related keywords