SI4943BDY-E3 VISHAY [Vishay Siliconix], SI4943BDY-E3 Datasheet
SI4943BDY-E3
Related parts for SI4943BDY-E3
SI4943BDY-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4943BDY—E3 Si4943BDY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
Page 2
... Si4943BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
Page 3
... Source-to-Drain Voltage (V) SD Document Number: 73073 S-41527—Rev. A, 16-Aug-04 New Product 2100 1800 1500 1200 25_C J 1.0 1.2 1.4 Si4943BDY Vishay Siliconix Capacitance C iss 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
Page 4
... Si4943BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 ...
Page 5
... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 73073 S-41527—Rev. A, 16-Aug-04 New Product −2 − Square Wave Pulse Duration (sec) Si4943BDY Vishay Siliconix 1 10 www.vishay.com 5 ...