SI4963BDY-T1 VISHAY [Vishay Siliconix], SI4963BDY-T1 Datasheet

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SI4963BDY-T1

Manufacturer Part Number
SI4963BDY-T1
Description
Dual P-Channel 2.5-V (G-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number:
SI4963BDY-T1-E3
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VISHAY
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SI4963BDY-T1-E3
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SI4963BDY-T1-GE3
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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72753
S-40235—Rev. A, 16-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4963BDY—E3 (Lead Free)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−20
−20
(V)
J
ti
t A bi
G
G
S
S
1
1
2
2
Si4963BDY-T1—E3 (Lead Free with Tape and Reel)
0.050 @ V
0.032 @ V
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Dual P-Channel 2.5-V (G-S) MOSFET
Top View
SO-8
GS
GS
a
a
= −2.5 V
= −4.5 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−6.5
−5.2
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
T
R
R
R
P-Channel MOSFET
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
D
S
1
1
10 secs
Typical
−6.5
−5.2
−1.7
2.0
1.3
58
91
34
−55 to 150
"12
−20
−40
G
2
Steady State
Maximum
P-Channel MOSFET
Vishay Siliconix
−4.9
−3.9
−0.9
62.5
1.1
0.7
110
40
Si4963BDY
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4963BDY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4963BDY—E3 (Lead Free) Si4963BDY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4963BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72753 S-40235—Rev. A, 16-Feb-04 New Product 25_C J 1.2 1.5 Si4963BDY Vishay Siliconix Capacitance 2000 1600 C iss 1200 800 C oss 400 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4963BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72753 S-40235—Rev. A, 16-Feb-04 New Product −2 − Square Wave Pulse Duration (sec) Si4963BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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