s-au82ah TOSHIBA Semiconductor CORPORATION, s-au82ah Datasheet

s-au82ah

Manufacturer Part Number

s-au82ah

Description

Toshiba Rf Power Amplifier Module

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.S-AU82AH.pdf (5 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

S-AU82AH

Manufacturer:

TOSHIBA

Quantity:

5 000

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FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL UHF RADIO APPLICATIONS

･Power Gain: 30.7 dB (Min.)

･Total Efficiency: 40% (Min.)

ABSOLUTE MAXIMUM RATINGS

Note 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible

Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case

Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the

Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the

*When the device is used at Tc =100°C, the output power rating is 60 W as shown in Figure 1. When the power

dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation

within the specified range.

Maximum Current

Power Supply Voltage

Control Voltage

Instantaneous Output Power

Input Power

Operating Case Temperature

Storage Temperature

-30 -20 -10

reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG

conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, when

designing the circuitry, derating factors should be applied so that the absolute maximum ratings are not

exceeded.

temperature. Ensure that the device should be operated within the specified operating range. The figures below

indicate the output power obtained 2 seconds after Po is generated.

module implementation.

CHARACTERISTICS

Figure.1 Pomax-Tc

Pomax-Tc

Tc (℃)

TOSHIBA RF POWER AMPLIFIER MODULE

SYMBOL

Pomax

c (opr)

stg

S-AU82AH

(Tc = 25°C, I

10.5 ≤ V

16.5V, within 2 seconds

10.5 ≤ V

mW (Note 2)

100

= 0 V (GND), RF: none

≤ 5.5 V, Pi = 50 mW, 10.5 ≤ V

≤ 16.5 V, Pi = 50 mW

≤ 16.5 V, V

TEST CONDITION

180

160

140

120

100

< 15 A,

-30 -20 -10

Power dissipation (PD)

PD = (VDD × IDD) – Po + Pi

≤ 5.5 V

≤ 5.5 V, Pi = 50

Figure.2 PDmax-Tc

= Z

PDmax-Tc

= 50Ω

Tc(℃)

≤

)

-30 to 100

-40 to 110

RATING

16.5

100

5.5

S-AU82AH

2007-06-21

90 100

UNIT

°C

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s-au82ah Summary of contents

Page 1

... T stg 180 160 140 120 100 80 60 Power dissipation (PD (VDD × IDD) – -30 -20 - 100 1 S-AU82AH 50Ω RATING 15 16.5 5.5 ≤ ≤ 5.5 V 100 ≤ 5 -30 to 100 -40 to 110 PDmax- ...

Page 2

... W (Adjusted via V o VSWR LOAD 20: 1 ALL PHASE (@ 2 s) 10.5 V ≤ V ≤ 16 ≤ GGajs — ≤ (Adjusted via VSWR LOAD 3: 1 ALL PHASE 2 S-AU82AH ) MIN TYP. MAX 450 — 520 60 — 30.7 — 40 — — — 3.0 — ...

Page 3

... Nm. ・Please solder the module leads after the screw is clamped. 3 S-AU82AH 2007-06-21 ...

Page 4

... EQUIVALENT CIRQUIT ① Ω ② TEST FIXTURE S-AU82AH ③ ⑤GROUND （Flange） Po C1: 15000 pF C2: 10 μF L: ϕ0.8-mm enamel wire, 8T, 5ID 2007-06-21 ④ Ω ...

... Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. Product Number (without A) This dot indicates that the actual product name is “S-AU82AH.” Alphanumeric characters: Date of manufacture Dot: Indicates that this product is manufactured by “TOSHIBA COMPONENTS.” ...

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s-au82ah TOSHIBA Semiconductor CORPORATION, s-au82ah Datasheet

s-au82ah

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s-au82ah Summary of contents

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