VF20100C-E3-4W VISHAY [Vishay Siliconix], VF20100C-E3-4W Datasheet
VF20100C-E3-4W
Related parts for VF20100C-E3-4W
VF20100C-E3-4W Summary of contents
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... Operating junction and storage temperature range Document Number: 88977 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20100C, VF20100C, VB20100C & VI20100C Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...
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... V20100C, VF20100C, VB20100C & VI20100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage per diode (1) Instantaneous forward voltage per diode (2) Reverse current per diode Notes (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T ...
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... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 88977 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20100C, VF20100C, VB20100C & VI20100C 10 1 1.2 1.4 1.6 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode ...
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... V20100C, VF20100C, VB20100C & VI20100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...