mds150 Microsemi Corporation, mds150 Datasheet
mds150
Manufacturer Part Number
mds150
Description
Avionics 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 Mhz
Manufacturer
Microsemi Corporation
Datasheet
1.MDS150.pdf
(3 pages)
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GENERAL DESCRIPTION
The MDS150 is a high power COMMON BASE bipolar transistor.
designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The
transistor includes input prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting in a hermetically sealed
package for proven highest MTTF.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
Maximum Voltage and Current
Collector to Emitter Voltage (BV
Emitter to Base Voltage (BV
Peak Collector Current (I
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
P
P
η
VSWR
Pd
Trise
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
BV
BV
h
θjc
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 120, repeated every 6.4mS
Initial Release - August 2007 Rev. A
FE
out
in
g
c
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
1
1
ebo
ces
cbo
1
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
c
our web site at
)
1
ebo
)
-65 to +150 °C
ces
)
+200 °C
350 W
3.5 V
www.microsemi.com
4 A
60 V
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
Ic = 25 mA
Vce = 5V, Ic = 500 mA
Ie = 5 mA
Ic = 25 mA
TEST CONDITIONS
or contact our factory direct.
150 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
It is
MDS150
MIN
150
3.5
10
60
60
20
CASE OUTLINE
55AW Style 1
TYP
34
MAX
100
3:1
0.5
0.5
20
UNITS
°C/W
nSec
dB
dB
W
W
%
V
V
V
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mds150 Summary of contents
Page 1
... GENERAL DESCRIPTION The MDS150 is a high power COMMON BASE bipolar transistor. designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF ...
Page 2
... TEST FIXTURE LAYOUT AND SCHEMATIC Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS150 ...
Page 3
... Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS150 ...