2SJ130S HITACHI [Hitachi Semiconductor], 2SJ130S Datasheet
2SJ130S
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2SJ130S Summary of contents
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Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK ...
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Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at T ...
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Power vs. Temperature Derating 100 Case Temperature T (°C) C Typical Output Characteristics –2.0 –10 V –15 V –7 V –1.6 Pulse Test –1.2 –0.8 –0 –10 –20 –30 Drain to Source ...
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Static Drain to Source on State Resistance (on) Forward Transfer Admittance yfs (S) Drain to Source Saturation Voltage V (V) DS (on) Static Drain to Source on State Resistance (on) ...
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RDrain to Source V (V) DS Gate to Source Voltage V (V) GS Switching Time t (ns) Forward Transfer Admittance yfs (S) Capacitance C (pF) ...
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Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor 50 Vin – Reverse Drain Current vs. ...
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Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...