2SJ651_03 SANYO [Sanyo Semicon Device], 2SJ651_03 Datasheet

2SJ651_03

Manufacturer Part Number

2SJ651_03

Description

DC / DC Converter Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.2SJ651_03.pdf (4 pages)

Current page: 1 of 4
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Ordering number : ENN7501

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : J651

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

PW 10 s, duty cycle 1%

Tc=25 C

I D =--1mA, V GS =0

V DS =- -60V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =--10A

2SJ651

DC / DC Converter Applications

Conditions

Package Dimensions

unit : mm

2063A

Conditions

3.2

2.55

1 2 3

10.0

1.6

2.55

1.2

0.75

2.55

[2SJ651]

min

- -1.2

P-Channl Silicon MOSFET

--60

52703 TS IM TA-100559

4.5

Ratings

2.8

0.7

typ

Ratings

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220ML

2.4

Continued on next page.

--55 to +150

2SJ651

max

150

--2.6

--60

--20

--80

2.0

--1

No.7501-1/4

Unit

Related parts for 2SJ651_03

2SJ651_03 Summary of contents

Page 1

Ordering number : ENN7501 Features Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Electrical ...

Page 2

Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage Switching Time Test Circuit V ...

Page 3

R DS (on 160 140 120 100 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage (off --2.5 --2.0 --1.5 --1.0 --0.5 0 --50 ...

Page 4

--100 -- Operation in this area 2 is limited (on). --1 Tc= Single pulse --0 ...

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