k6x0808t1d Samsung Semiconductor, Inc., k6x0808t1d Datasheet
k6x0808t1d
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k6x0808t1d Summary of contents
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... Finalized - Changed I from 3mA to 2mA CC - Changed I from 25mA to 20mA CC2 - Changed I from 3mA to 0.4mA SB - Changed I for K6X0808T1D-F from SB1 - Changed I for K6X0808T1D-F from SB1 - Changed I for K6X0808T1D Changed I for K6X0808T1D Errata correction The attached datasheets are provided by SAMSUNG Electronics ...
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... NC SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6X0808T1D families are fabricated by SAMSUNG s advanced CMOS process technology. The families support verious operating temperature ranges and have various pack- age types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current ...
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... K6X0808T1D Family PRODUCT LIST Commercial Temp. Products(0~70 C) Part Name Function K6X0808T1D-GB70 28-SOP, 70ns, LL K6X0808T1D-GB85 28-SOP, 85ns, LL K6X0808T1D-YB70 28-sTSOP-F, 70ns, LL K6X0808T1D-YB85 28-sTSOP-F, 85ns, LL K6X0808T1D-NB70 28-sTSOP-R, 70ns, LL K6X0808T1D-NB85 28-sTSOP-R, 85ns, LL FUNCTIONAL DESCRIPTION means don't care (Must be in high or low states) ...
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... K6X0808T1D Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note: 1. Industrial Product Otherwise specified A A utomotive Product: T =-40 to 125 C, Otherwise specified A 2. Overshoot: Vcc+3.0V in case of pulse width 30ns. 3. Undershoot: -3.0V in case of pulse width 30ns. ...
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... K6X0808T1D Family AC OPERATING CONDITIONS TEST CONDITIONS ( Test Load and Input/Output Reference) Input pulse level: 0.4 to 2.2V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): C =100pF+1TTL L C =30pF+1TTL L AC CHARACTERISTICS (V =2.7~3.6V, Industrial product:T CC Parameter List Read Cycle Time Address Access Time ...
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... K6X0808T1D Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS OE High-Z Data out NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...
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... K6X0808T1D Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS WE Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS WE Data in Data out NOTES (WRITE CYCLE write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE going low : A write end at the earliest transition among CS going high and WE going high the end of write ...
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... K6X0808T1D Family PACKAGE DIMENSIONS 28 PIN PLASTIC SMALL OUTLINE PACKAGE(450mil) #28 #1 18.69 0.736 18.29 0.720 0.89 0.41 0. 0.016 0.035 0.004 #15 11.81 0.30 0.465 0.012 #14 2.59 0.20 MAX 0.102 0.008 3.00 0.118 0.20 0.008 1.27 0.05 MIN 0.050 0.002 8 CMOS SRAM Units: millimeter(inch) 0~8 8.38 0.20 0.330 0.008 1.02 0.20 +0.10 0.15 0.040 -0.05 0.008 +0.004 0.006 -0.002 MAX 0.10 MAX 0.004 MAX Revision 1.0 ...
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... K6X0808T1D Family PACKAGE DIMENSIONS 28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4F) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #1 0.55 #14 0.0217 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4R) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #14 0.55 0.0217 #1 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 13.40 0.20 0.528 0.008 #28 #15 11.80 0.10 +0.10 0.15 0.465 0.004 -0.05 +0.004 ...