k6x0808t1d Samsung Semiconductor, Inc., k6x0808t1d Datasheet - Page 2

no-image

k6x0808t1d

Manufacturer Part Number
k6x0808t1d
Description
32kx8 Bit Low Power Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
k6x0808t1d-GB55
Quantity:
200
Part Number:
k6x0808t1d-GB70
Manufacturer:
SAMSUNG
Quantity:
2 148
Part Number:
k6x0808t1d-GB70
Quantity:
200
Part Number:
k6x0808t1d-GB85
Manufacturer:
SAMSUNG
Quantity:
2 148
Part Number:
k6x0808t1d-GF55
Quantity:
200
Part Number:
k6x0808t1d-GF70
Manufacturer:
SAMSUNG
Quantity:
2 148
Part Number:
k6x0808t1d-GF70
Quantity:
200
Part Number:
k6x0808t1d-GF85
Manufacturer:
SAMSUNG
Quantity:
2 148
Part Number:
k6x0808t1d-GQ55
Quantity:
200
Part Number:
k6x0808t1d-TB70
Manufacturer:
SAMSUNG
Quantity:
2 148
VSS
I/O1
I/O2
I/O3
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
K6X0808T1D Family
PRODUCT FAMILY
1. The parameters are tested with 30pF test load
32Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
FEATURES
PIN DESCRIPTION
K6X0808T1D-B
K6X0808T1D-F
K6X0808T1D-Q
Pin Name
Product Family
Process Technology: Full CMOS28-
Organization: 32K x 8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three state outputs
Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
WE
CS
OE
~A
14
28-SOP
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Function
27
26
25
24
23
22
21
20
19
18
17
16
15
28
Operating Temperature Vcc Range
Automotive(-40~125 C)
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Industrial(-40~85 C)
Industrial(0~70 C)
VCC
VCC
A11
A13
A14
A12
A12
A14
A13
A11
WE
WE
OE
OE
A9
A8
A7
A6
A5
A4
A3
A3
A4
A5
A6
A7
A8
A9
Pin Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
13
12
11
10
9
8
7
6
5
4
3
2
1
I/O
Vcc
NC
1
Vss
~I/O
Type1 - Forward
Type1 - Reverse
8
28-TSOP
28-TSOP
Data Inputs/Outputs
Power
Ground
No connect
Function
2.7~3.6V
28
27
26
25
24
23
22
21
20
19
18
17
16
15
15
16
17
18
19
20
21
22
23
24
25
26
27
28
70
Speed
1)
/85ns
2
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6X0808T1D families are fabricated by SAMSUNG s
(I
CS
WE
OE
Standby
SB1
1
Power Dissipation
10 A
Row
Addresses
6 A
I/O
I/O
, Max)
1
8
Control
logic
(I
Operating
CC2,
25mA
Clk gen.
Max)
Data
cont
Data
cont
Row
select
28-SOP-450, 28-TSOP1-0813.4F/R
28-SOP-450, 28-TSOP1-0813.4F
CMOS SRAM
Column Addresses
Precharge circuit.
PKG Type
Memory array
Column select
I/O Circuit
December 2003
Revision 1.0

Related parts for k6x0808t1d