k6x0808c1d Samsung Semiconductor, Inc., k6x0808c1d Datasheet - Page 4

• Manufacturer Part Number: k6x0808c1d
• Description: 32kx8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Industrial Product: T
2. Overshoot: Vcc+3.0V in case of pulse width 30ns.
3. Undershoot: -3.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
K6X0808C1D Family
DC AND OPERATING CHARACTERISTICS
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Automotive Product: T
Item
Item
Item
A
=-40 to 85 C, Otherwise specified
A
=-40 to 125 C, Otherwise specified
1
)
(f=1MHz, TA=25 C)
Symbol
V
I
I
V
I
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
LI
OL
OH
Symbol
V
CS=V
Cycle time=1 s, 100% duty, I
V
Cycle time=Min,100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
C
C
I
OL
OH
IO
IN
IN
IN
IO
=2.1mA
=0mA, CS=V
=Vss to Vcc
=-1.0mA
0.2V
Symbol
IH
IH
Vcc
Vss
V
V
, Other inputs=V
or OE=V
IH
IN
IL
Vcc -0.2V
IL,
IH
V
or WE=V
IN
Test Condition
4
Test Conditions
=V
IH
V
V
IH
1)
or V
-0.5
IN
IO
Min
or V
4.5
2.2
=0V
=0V
0
IL
IO
IO
, V
3)
IL
IL
=0mA, CS=V
=0mA, CS 0.2V,
, Read
IO
=V
SS
to Vcc
K6X0808C1D-Q
K6X0808C1D-F
IL,
Typ
5.0
0
-
-
V
IN
=V
Min
-
-
IH
or V
IL
Vcc+0.5
CMOS SRAM
Min
2.4
Max
-1
-1
5.5
0.8
-
-
-
-
-
-
-
Max
0
10
8
2)
Typ
-
-
-
-
-
-
-
-
-
-
December 2003
Revision 1.0
Max
0.4
0.4
25
15
25
1
1
5
7
-
Unit
Unit
pF
pF
V
V
V
V
Unit
mA
mA
mA
mA
V
V
A
A
A
A