FLL400IP-3 ETC1 [List of Unclassifed Manufacturers], FLL400IP-3 Datasheet
FLL400IP-3
Manufacturer Part Number
FLL400IP-3
Description
L-Band Medium & High Power GaAs FET
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
1.FLL400IP-3.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FLL400IP-3
Manufacturer:
ADI
Quantity:
5 000
Edition 1.5
October 2004
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
CASE STYLE: IP
Note 1: The device shall be measured at a constant V GS condition.
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 43% (Typ.)
• Broad Frequency Range: 2300 to 2500 MHz.
• Suitable for class A operation at 10V
DESCRIPTION
The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power S-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
and class AB operation at 12V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
1. The drain-source operating voltage (V DS ) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145°C.
gate resistance of 25Ω.
Parameter
Item
Symbol
Symbol
V DS
V GS
T stg
V
T ch
G
G
P
P
P T
I
I
η
DSS
gm
DSR
R
V
GSO
1dB
1dB
1dB
add
1dB
th
p
V
V
V
I
V
f = 2.5 GHz
I
V
f = 2.5 GHz
I
Channel to Case
GS
DS
DS
L-Band Medium & High Power GaAs FET
DS
DS
DS
DS
DS
1
= 2A
= 5A (Note 1)
= -720µA
= 5V, V
= 5V, I
= 5V, I
= 12V
= 10V
Tc = 25°C
Conditions
Condition
DS
DS
GS
= 720mA
= 7.2A
= 0V
Min.
44.5
-1.0
8.0
-5
-65 to +175
-
-
-
-
-
-
-
Rating
+175
107
15
-5
Limits
6000
Typ.
45.5
44.5
FLL400IP-3
-2.0
9.0
6.0
9.0
1.0
12
43
-
G.C.P.: Gain Compression Point
Max.
-3.5
8.0
1.4
16
-
-
-
-
-
-
-
Unit
°C/W
dBm
dBm
°C
°C
W
Unit
V
V
mS
dB
dB
%
A
V
V
A
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FLL400IP-3 Summary of contents
Page 1
... Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power S-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...
Page 2
... FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT POWER & η add vs. INPUT POWER 12V 2.5GHz P out η add Input Power (dBm) IMD vs.OUTPUT POWER - 10V 2.5GHz ∆ ...
Page 3
... FLL400IP-3 S22 MAG ANG .972 174.9 .867 174.5 .867 174.0 .857 173.1 .854 172.6 .850 171.7 .821 172.8 .835 171.4 .829 170.9 .821 170.3 .815 170.2 .809 169.8 ...
Page 4
... FLL400IP-3 L-Band Medium & High Power GaAs FET 6 2-R1.3 ±0.2 (0.051) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...