MRF1004 MACOM [Tyco Electronics], MRF1004 Datasheet

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MRF1004

Manufacturer Part Number
MRF1004
Description
MICROWAVE POWER TRANSISTORS NPN SILICON
Manufacturer
MACOM [Tyco Electronics]
Datasheet
1.MRF1004.pdf (5 pages)

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
long pulse TACAN, IFF, DME, and radar transmitters.
1
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
REV 8
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Designed for Class B and C common base amplifier applications in short and
Guaranteed Performance @ 1090 MHz, 35 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Internal Input Matching for Broadband Operation
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
(I
(I
(I
(I
(V
(I
C
C
C
E
C
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
CB
= 5.0 mAdc, I
= 5.0 mAdc, V
= 5.0 mAdc, I
= 1.0 mAdc, I
= 75 mAdc, V
= 35 Vdc, I
E
B
E
C
CE
BE
= 0)
= 0)
= 0)
= 0)
= 5.0 Vdc)
= 0)
Characteristic
Characteristic
C
Rating
= 25 C (1)
(T
C
= 25 C unless otherwise noted)
V
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
CBO
h
FE
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
I
stg
C
D
JC
Min
3.5
20
50
50
10
—
MICROWAVE POWER
CASE 332A–03, STYLE 1
Typ
4.0 W, 960–1215 MHz
—
—
—
—
—
—
–65 to +150
TRANSISTORS
NPN SILICON
Value
Max
250
3.5
7.0
20
50
40
25
Max
100
0.5
Order this document
—
—
—
—
by MRF1004MB/D
(continued)
mW/ C
mAdc
mAdc
Watts
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
C/W
—
C

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MRF1004 Summary of contents

Page 1

... C unless otherwise noted) Symbol Min V 20 (BR)CEO V 50 (BR)CES V 50 (BR)CBO V 3.5 (BR)EBO I — CBO Order this document by MRF1004MB/D 4.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 Value Unit 20 Vdc 50 Vdc 3.5 Vdc 250 mAdc 7.0 Watts 40 mW/ C –65 to +150 C ...

Page 2

ELECTRICAL CHARACTERISTICS — continued Characteristic DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc 1.0 MHz FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1.0%) Common–Base Amplifier Power Gain ( ...

Page 3

Figure 2. Output Power versus Input Power Figure 4. Output Power versus Supply Voltage Figure 6. Series Equivalent Input/Output Impedance REV 8 3 TYPICAL CHARACTERISTICS Figure 3. Output Power versus Frequency Figure 5. Power Gain versus Frequency ...

Page 4

REV 8 4 TYPICAL CHARACTERISTICS Figure 7. Typical Long Pulse Performance ...

Page 5

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets ...

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