MRF1507T1 MOTOROLA [Motorola, Inc], MRF1507T1 Datasheet

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MRF1507T1

Manufacturer Part Number
MRF1507T1
Description
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
(1) Not designed for 12.5 volt applications.
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 1998
MOTOROLA RF DEVICE DATA
Drain–Source Voltage (1)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
The MRF1507 is designed for broadband commercial and industrial
Specified Performance @ 520 MHz, 7.5 Volts
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Derate above 25 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
Characteristic
Rating
G
D
S
Symbol
Symbol
V DSS
R JC
V GS
T stg
P D
I D
T j
MRF1507T1
LATERAL N–CHANNEL
MRF1507
RF POWER MOSFET
CASE 466–02, STYLE 1
8 W, 520 MHz, 7.5 V
– 65 to +150
BROADBAND
Value
62.5
0.50
Max
150
(PLD 1.5)
25
4
2
20
MRF1507 MRF1507T1
Order this document
by MRF1507/D
Watts
W/ C
Unit
Unit
Vdc
Vdc
Adc
C/W
C
C
1

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MRF1507T1 Summary of contents

Page 1

... W, 520 MHz, 7.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET D CASE 466–02, STYLE Symbol V DSS stg – +150 T j Symbol R JC Order this document by MRF1507/D (PLD 1.5) Value Unit 25 Vdc 20 Vdc 4 Adc 62.5 Watts 0. 150 C Max Unit 2 C/W MRF1507 MRF1507T1 1 ...

Page 2

... Common–Source Amplifier Power Gain ( 7.5 Vdc dBm 150 mA 520 MHz) Drain Efficiency ( 7.5 Vdc dBm 150 mA 520 MHz) P out ( 7.5 Vdc dBm 150 mA 520 MHz) MRF1507 MRF1507T1 2 Symbol Min Typ Max I DSS — ...

Page 3

... Microstrip 0.114 x 0.083 Microstrip 0.154 x 0.083 Microstrip 0.259 x 0.213 Microstrip 0.217 x 0.213 Microstrip 0.175 x 0.083 Microstrip 0.747 x 0.083 Microstrip 0.608 x 0.083 Microstrip 0.594 x 0.083 Microstrip Glass Teflon, 31 mils 700 mW 500 300 SUPPLY VOLTAGE (V) MRF1507 MRF1507T1 3 ...

Page 4

... GATE CURRENT (mA) Figure 6. Output Power versus Gate Current 12 GAIN 0.1 0.2 0.3 0.4 0.5 0.6 0 (A) Figure 8. P out versus I DQ MRF1507 MRF1507T1 4 TYPICAL CHARACTERISTICS 200 mA 11 700 mW 10 500 300 Figure 5 ...

Page 5

... Figure 11. P out versus I DQ 700 mW 500 250 mW 300 400 500 600 700 800 900 1000 (mA) Figure 13. P out versus 7 155 MHz 800 (dBm) Figure 15. P out versus P in MRF1507 MRF1507T1 5 ...

Page 6

... (dBm) Figure 16. P out versus DRAIN–SOURCE VOLTAGE (V) Figure 18. Capacitance versus Voltage MRF1507 MRF1507T1 6 TYPICAL CHARACTERISTICS 175 MHz 800 Figure 17. Drain Current versus Gate Voltage ...

Page 7

... Conjugate of source impedance with parallel 10 resistor and 1000 pF capacitor in series with gate Conjugate of the load impedance at given output power, voltage, frequency, and D > 6.2 – j15.1 2.3 – j1.8 8.29 – j16.9 2.5 – j0.8 5.33 – j17.0 2.6 – j0.6 MRF1507 MRF1507T1 7 ...

Page 8

... MHz | 0.83 –156 100 0.83 –167 200 0.83 –172 300 0.84 –173 400 0.86 –173 500 0.87 –174 700 0.89 –174 850 0.91 –175 1000 0.92 –175 1200 0.93 –176 MRF1507 MRF1507T1 150 15.18 100 0.04 7.68 84 0.04 3.53 65 0.03 2.08 53 0.03 1.37 44 0.03 0.96 37 0.02 0.54 27 0.01 0.38 22 0.01 0.29 19 0.01 0. 800 ...

Page 9

... If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. 9 — can result in permanent GS MRF1507 MRF1507T1 9 ...

Page 10

... As with all RF power devices, the goal MRF1507 MRF1507T1 10 of the thermal design should be to minimize the temperature at the back side of the package. ...

Page 11

... D 0.130 0.150 3.30 3.81 E 0.021 0.026 0.53 0. 0.026 0.044 0.66 1.12 G 0.050 0.070 1.27 1.78 H 0.045 0.063 1.14 1.60 J 0.160 0.180 4.06 4.57 K 0.273 0.285 6.93 7.24 L 0.245 0.255 6.22 6.48 N 0.230 0.240 5.84 6.10 P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 R 0.200 0.210 5.08 5.33 S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 ZONE V 0.000 0.021 0.00 0.53 ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25 MRF1507 MRF1507T1 11 ...

Page 12

... Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRF1507 MRF1507T1 12 are registered trademarks of Motorola, Inc. Motorola, Inc Equal Mfax is a trademark of Motorola, Inc. ...

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