MRF1511NT1_06 FREESCALE [Freescale Semiconductor, Inc], MRF1511NT1_06 Datasheet
MRF1511NT1_06
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MRF1511NT1_06 Summary of contents
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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen- cies to 175 MHz. The high gain and broadband performance of this device makes ...
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Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Current ( Vdc Gate - Source Leakage Current ( Vdc Characteristics Gate Threshold ...
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INPUT B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) C1, C5, C18 120 pF, 100 mil Chip Capacitor C2, C10, C12 pF, Trimmer ...
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TYPICAL CHARACTERISTICS, 135 - 175 MHz 16 155 MHz 14 135 MHz 175 MHz OUTPUT POWER (WATTS) out Figure 4. Gain versus Output Power ...
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INPUT C1 C2 B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) C1, C12 330 pF, 100 mil Chip Capacitor C2 43 pF, 100 mil Chip Capacitor C3, C10 0 to ...
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TYPICAL CHARACTERISTICS MHz 18 66 MHz 16 88 MHz OUTPUT POWER (WATTS) out Figure 13. Gain versus Output Power MHz 9 ...
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Figure 19. MTTF Factor versus Junction Temperature RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 110 120 130 140 150 160 170 180 T , JUNCTION TEMPERATURE (°C) J This above graph displays ...
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MHz 175 MHz 150 mA MHz Ω 135 20.1 - j0.5 155 17.0 +j3.6 175 15.2 +j7 Complex conjugate of ...
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Table 5. Common Source Scattering Parameters ( ∠ φ MHz 11 30 0.88 - 165 50 0.88 - 171 100 0.87 - 175 150 0.87 - 176 200 0.87 - 177 250 0.87 - ...
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... However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage ...
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... Freescale Semiconductor Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback ...
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ZONE V 4 É É É É É É É É É É É É É É É É ZONE W 1 É É É É É É É ...
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How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 ...