MRF18030BR3 MOTOROLA [Motorola, Inc], MRF18030BR3 Datasheet

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MRF18030BR3

Manufacturer Part Number
MRF18030BR3
Description
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1930 – 1990 MHz.
• Typical GSM Performance:
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm,
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2002
REV 2
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for GSM and EDGE base station applications with frequencies
13 inch Reel.
Derate above 25°C
Power Gain – 14 dB (Typ) @ 30 Watts
Efficiency – 50% (Typ) @ 30 Watts
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
CASE 465E–03, STYLE 1
J
MRF18030BSR3
GSM/GSM EDGE 1.93 – 1.99 GHz,
MRF18030BR3
MRF18030BR3
MRF18030BR3 MRF18030BSR3
LATERAL N–CHANNEL
RF POWER MOSFETs
NI–400
M3 (Minimum)
2 (Minimum)
–65 to +200
+15, –0.5
30 W, 26 V
Value
Class
CASE 465F–03, STYLE 1
83.3
0.48
Max
200
2.1
65
MRF18030BSR3
Order this document
NI–400S
by MRF18030B/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF18030BR3 Summary of contents

Page 1

... CASE 465E–03, STYLE 1 NI–400 MRF18030BR3 CASE 465F–03, STYLE 1 NI–400S MRF18030BSR3 Symbol Value Unit V 65 Vdc DSS V +15, –0.5 Vdc GS P 83.3 Watts D 0.48 W/°C °C T –65 to +200 stg °C T 200 J Class 2 (Minimum) M3 (Minimum) Symbol Max Unit °C/W R 2.1 θJC MRF18030BR3 MRF18030BSR3 1 ...

Page 2

... Vdc 250 mA 1930 – 1990 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. MRF18030BR3 MRF18030BSR3 2 = 25°C, 50 ohm system unless otherwise noted) Symbol V (BR)DSS I DSS ...

Page 3

... Microstrip Z3 0.257″ x 0.633″ Microstrip Z4 0.189″ x 0.394″ Microstrip Z5 0.335″ x 0.394″ Microstrip Z6 0.616″ x 0.087″ Microstrip Z7 0.845″ x 0.087″ Microstrip Z8 0.366″ x 0.087″ Microstrip ≈0.500″ x 0.087″ Microstrip Z9 MRF18030B MRF18030BR3 MRF18030BSR3 3 ...

Page 4

... Figure 3. Wideband Gain and IRL and 15 W Output Power _ Figure 5. Power Gain versus Output Power _ Figure 7. Power Gain versus Output Power MRF18030BR3 MRF18030BSR3 4 Figure 4. Output Power versus Frequency Figure 6. Power Gain versus Output Power h _ Figure 8. Power Gain and Efficiency versus ...

Page 5

... MOTOROLA RF DEVICE DATA Ω Ω 2.92 + j8.24 4.18 + j9.06 3.84 + j9.75 4.59 + j9.46 4.15 + j10.38 4.98 + j9.06 4.04 + j10.22 6.10 + j7.63 6.12 + j12.29 5.83 + j6.89 6.20 + j12.29 5.55 + j6.33 8.61 + j12.10 5.93 + j6.66 15.19 + j11.85 3.82 + j5.33 = Complex conjugate of the source impedance. impedance at a given power, voltage, bias current and frequency. * was chosen based on tradeoffs between gain, OL output power, and drain efficiency Ω MRF18030BR3 MRF18030BSR3 5 ...

Page 6

... MRF18030BR3 MRF18030BSR3 6 NOTES MOTOROLA RF DEVICE DATA ...

Page 7

... CASE 465F–03 ISSUE B NI–400S MRF18030BSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa H bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF18030BR3 MRF18030BSR3 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF18030BR3 MRF18030BSR3 8 MOTOROLA RF DEVICE DATA MRF18030B/D ...

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