MRF19030R3

Manufacturer Part NumberMRF19030R3
DescriptionRF POWER FIELD EFFECT TRANSISTORS
ManufacturerMOTOROLA [Motorola, Inc]
MRF19030R3 datasheet
 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
f r e q u e n c i e s f r o m 1 . 8 t o 2 . 0 G H z . S u i t a b l e f o r F M , T D M A , C D M A a n d
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2002
Order this document
by MRF19030/D
MRF19030R3
MRF19030SR3
2.0 GHz, 30 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF19030R3
CASE 465F–03, STYLE 1
NI–400S
MRF19030SR3
Symbol
Value
Unit
V
65
Vdc
DSS
V
–0.5, +15
Vdc
GS
P
83.3
Watts
D
0.48
W/°C
°C
T
–65 to +200
stg
°C
T
200
J
Class
2 (Minimum)
M3 (Minimum)
Symbol
Max
Unit
°C/W
R
2.1
θJC
MRF19030R3 MRF19030SR3
1

MRF19030R3 Summary of contents

  • Page 1

    ... CASE 465E–03, STYLE 1 NI–400 MRF19030R3 CASE 465F–03, STYLE 1 NI–400S MRF19030SR3 Symbol Value Unit V 65 Vdc DSS V –0.5, +15 Vdc GS P 83.3 Watts D 0.48 W/°C °C T –65 to +200 stg °C T 200 J Class 2 (Minimum) M3 (Minimum) Symbol Max Unit °C/W R 2.1 θJC MRF19030R3 MRF19030SR3 1 ...

  • Page 2

    ... MHz and f1 = 1990.0 MHz 1990.1 MHz) Output Mismatch Stress ( Vdc CW 300 mA, DD out 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19030R3 MRF19030SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V ...

  • Page 3

    ... Microstrip Z6 0.510″ x 0.200″ Microstrip Z7 0.325″ x 0.280″ Microstrip Z8 0.080″ x 0.480″ Microstrip Z9 0.080″ x 0.530″ Microstrip Z10 0.080″ x 0.671″ Microstrip Substrate 0.030″ x 3.00″ x 5.00″ Glass Teflon Arlon MRF19030R3 MRF19030SR3  ...

  • Page 4

    ... Figure 3. Class AB Broadband Circuit Performance Figure 5. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF19030R3 MRF19030SR3 4 TYPICAL CHARACTERISTICS Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage η ...

  • Page 5

    ... Complex conjugate of the optimum load OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 1930 10.57 + j7.69 5.81 + j5.01 1960 10.54 + j7.43 5.84 + j4.67 1990 10.47 + j7.21 5.84 + j4.35 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF19030R3 MRF19030SR3 5 ...

  • Page 6

    ... MRF19030R3 MRF19030SR3 6 NOTES MOTOROLA RF DEVICE DATA ...

  • Page 7

    ... CASE 465F–03 ISSUE B NI–400S MRF19030SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc H INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19030R3 MRF19030SR3 7 ...

  • Page 8

    ... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19030R3 MRF19030SR3 8 MOTOROLA RF DEVICE DATA MRF19030/D ...