MRF19085SR3

Manufacturer Part NumberMRF19085SR3
DescriptionRF Power Field Effect Transistors
ManufacturerMOTOROLA [Motorola, Inc]
MRF19085SR3 datasheet
 
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Freescale Semiconductor, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
I
= 850 mA, P
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
DQ
out
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2004
For More Information On This Product,
= 26 Volts,
DD
Symbol
V
DSS
V
P
T
T
Symbol
R
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
Go to: www.freescale.com
Order this document
by MRF19085/D
MRF19085R3
MRF19085LR3
MRF19085SR3
MRF19085LSR3
1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF19085R3,MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085SR3, MRF19085LSR3
Value
Unit
65
Vdc
- 0.5, +15
Vdc
GS
273
Watts
D
1.56
W/°C
- 65 to +150
°C
stg
200
°C
J
Value (1)
Unit
0.79
°C/W
θJC
Class
1 (Minimum)
M3 (Minimum)
1