MRF21010LR1_06 FREESCALE [Freescale Semiconductor, Inc], MRF21010LR1_06 Datasheet

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MRF21010LR1_06

Manufacturer Part Number
MRF21010LR1_06
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
• Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for W- CDMA base station applications with frequencies from 2110
5 MHz Offset/4.096 MHz BW, 15 DTCH
10 Watts CW Output Power
Derate above 25°C
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF21010
2110 - 2170 MHz, 10 W, 28 V
MRF21010LSR1
MRF21010LR1
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
MRF21010LR1 MRF21010LSR1
M1 (Minimum)
1 (Minimum)
- 65 to +150
BROADBAND
MRF21010LSR1
- 0.5, +15
- 0.5, +65
MRF21010LR1
Class
Value
43.75
Value
0.25
150
200
5.5
NI - 360S
NI - 360
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF21010LR1_06 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications used in Class AB for PCN - PCS/cellular radio and WLL applications. • ...

Page 2

Table 4. Electrical Characteristics (T Characteristic Off Characteristics Drain- Source Breakdown Voltage ( Vdc, I =10 μ Zero Gate Voltage Drain Current ( Vdc Vdc Gate- Source Leakage Current ...

Page 3

INPUT 0.964″ x 0.087″ Microstrip Z2 0.905″ x 0.087″ Microstrip Z3 0.433″ x 0.512″ Microstrip Z4 1.068″ x 0.087″ Microstrip Z5 0.752″ x 0.087″ Microstrip Table 5. MRF21010L Test ...

Page 4

C10 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These ...

Page 5

IRL Vdc (PEP 100 mA DD out DQ 20 Two Tone Measurement, 100 kHz Tone Spacing IMD 5 0 2000 2080 2110 ...

Page 6

Z Z Figure 10. Series Equivalent Source and Load Impedance MRF21010LR1 MRF21010LSR1 1990 MHz Z load f = 2230 MHz f = 1990 MHz Z source f = 2230 MHz 100 ...

Page 7

(FLANGE bbb ccc T M (LID SEATING T PLANE M bbb (INSULATOR (FLANGE ...

Page 8

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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