ne32684a Renesas Electronics Corporation., ne32684a Datasheet

ne32684a

Manufacturer Part Number

ne32684a

Description

Ultra Low Noise Pseudomorphic Hj Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.NE32684A.pdf (5 pages)

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NOT RECOMMENDED FOR NEW DESIGN

FEATURES

• VERY LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• L

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

DESCRIPTION

The NE32684A is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

SYMBOLS

0.5 dB typical at 12 GHz

11.5 dB Typical at 12 GHz

TH (CH-C)

TH (CH-A)

GSO

DSS

1dB

= 0.20 m, W

1dB

Optimum Noise Figure, V

Associated Gain, V

Output Power at 1 dB Gain Compression Point, f = 12 GHz

Gain at P

Saturated Drain Current, V

Pinch-off Voltage, V

Transconductance, V

Gate to Source Leakage Current, V

Thermal Resistance (Channel to Ambient)

Thermal Resistance (Channel to Case)

= 200 m

1dB

, f = 12 GHz, V

PARAMETERS AND CONDITIONS

PACKAGE OUTLINE

= 2 V, I

PART NUMBER

= 2 V, I

= 2 V,V

= 2 V, I

PSEUDOMORPHIC HJ FET

= 10 mA, f = 12 GHz

= 2 V, I

= 100 A

= 10 mA

= -3 V

= 10 mA, f = 12 GHz

= 2 V, I

= 0 V

= 10 mA

= 20 mA

= 25°C)

ULTRA LOW NOISE

= 10 mA

= 20 mA

UNITS

°C/W

dBm

µA

0.8

0.6

0.4

1.2

0.2

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

10.0

MIN

-2.0

Frequency, f (GHz)

= 2 V, I

NE32684A

= 10 mA

84AS

NE32684A

10.75

TYP

11.5

11.0

11.5

-0.8

750

0.5

8.5

0.5

MAX

10.0

-0.2

350

0.6

Related parts for ne32684a

ne32684a Summary of contents

Page 1

... LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current DS I Gate Current GRF T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. ...

Page 3

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS NE32684A FREQUENCY S 11 GHz MAG ANG 0.1 0.999 -2.0 0.2 0.999 -3.6 0.5 0.999 -9.0 1.0 0.991 -17.6 2.0 0.960 -33.9 3.0 0.922 -49.4 4.0 0.873 -64.5 5.0 0.816 -79.0 6.0 0.758 -92.9 7.0 0.712 -106.0 8.0 0.667 -117.2 9.0 0.629 -128.8 10.0 0.592 -140.1 11.0 0.549 -152.4 12.0 0.513 -165.5 13.0 0.487 -179.2 14.0 0.464 168.1 15.0 0.443 154 ...

Page 4

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS NE32684A FREQUENCY S 11 GHz MAG ANG 0.1 0.999 -2.3 0.2 0.999 -4.0 0.5 0.998 -9.6 1.0 0.986 -18.9 2.0 0.948 -36.2 3.0 0.894 -52.3 4.0 0.833 -67.8 5.0 0.766 -82.1 6.0 0.703 -95.8 7.0 0.653 -108.6 8.0 0.607 -119.6 9.0 0.569 -130.6 10.0 0.529 -141.4 11.0 0.487 -153.2 12.0 0.554 -166.0 13.0 0.428 -179.3 14.0 0.407 167.8 15.0 0.387 154 ...

Page 5

... EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA · CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION NE32684AS NE32684A-T1 Note: Long leaded (1.7 mm min.) 84A package available upon request in bulk quantitites up to 1000 pcs. To order specify NE32684A-SL. 0.5 ± 0.1 G (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 · ...

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