MRF21125S MOTOROLA [Motorola, Inc], MRF21125S Datasheet

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MRF21125S

Manufacturer Part Number
MRF21125S
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for V
• 100% Tested under 2–carrier W–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 5
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for W–CDMA base station applications with frequencies from 2110
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 28 Volts, I
DQ
= 1600
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
MRF21125 MRF21125S MRF21125SR3
GS
D
J
CASE 465B–03, STYLE 1
CASE 465C–02, STYLE 1
MRF21125SR3
MRF21125S
(MRF21125S)
LATERAL N–CHANNEL
MRF21125
(MRF21125)
2170 MHz, 125 W, 28 V
RF POWER MOSFETs
(NI–880S)
(NI–880)
M3 (Minimum)
2 (Minimum)
–65 to +150
+15, –0.5
Value
Class
1.89
Max
0.53
330
200
65
Order this document
by MRF21125/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF21125S Summary of contents

Page 1

... CASE 465B–03, STYLE 1 CASE 465C–02, STYLE 1 Symbol V DSS stg T J Symbol R θJC MRF21125 MRF21125S MRF21125SR3 Order this document by MRF21125/D MRF21125 MRF21125S 2170 MHz, 125 LATERAL N–CHANNEL RF POWER MOSFETs (NI–880) (MRF21125) (NI–880S) (MRF21125S) Value Unit 65 Vdc +15, –0.5 ...

Page 2

... MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) Output Mismatch Stress ( Vdc 125 W CW 1600 mA 2170 MHz, DD out DQ VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. MRF21125 MRF21125S MRF21125SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS g fs ...

Page 3

... Vdc 125 W CW 1600 mA 2170.0 MHz) DD out DQ MOTOROLA RF DEVICE DATA (T = 25°C unless otherwise noted) C Symbol Min G — ps η — IMD — G — ps η — MRF21125 MRF21125S MRF21125SR3 Typ Max Unit 12 — — % –30 — dBc 11.5 — — ...

Page 4

... W Chip Resistor R2 560 kΩ, 1/8 W Chip Resistor 4.7 Ω, 1/8 W Chip Resistor R3 12 Ω, 1/8 W Chip Resistor R4 W1 Solid Copper Buss Wire, 16 AWG MRF21125 MRF21125S MRF21125SR3 4 Z9 0.179″ x 0.219″ Microstrip Z10 0.100″ x 0.336″ Microstrip Z11 0.534″ x 0.142″ Microstrip Z12 0.089″ ...

Page 5

... Figure 2. MRF21125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5 ...

Page 6

... Figure 3. 2 Carrier (10 MHz spacing) W–CDMA Spectrum η Figure 5. CW Performance Figure 7. Intermodulation Distortion versus Output Power MRF21125 MRF21125S MRF21125SR3 6 TYPICAL CHARACTERISTICS Figure 4. 2 Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Figure 6. Broadband Linearity Performance Figure 8. Power Gain versus Output Power η ...

Page 7

... MOTOROLA RF DEVICE DATA f MHz Ω 2110 3.81 + j6.86 2140 4.33 + j7.90 2170 4.84 + j8. Complex conjugate of source impedance Complex conjugate of the optimum load OL impedance at a given output power, voltage, IMD, bias current and frequency MRF21125 MRF21125S MRF21125SR3 Ω Ω 1.56 – j1.58 1.53 – j1.90 1.48 – j2.26 7 ...

Page 8

... MRF21125 MRF21125S MRF21125SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF21125 MRF21125S MRF21125SR3 9 ...

Page 10

... MRF21125 MRF21125S MRF21125SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 465C–02 ISSUE A (NI–880S) (MRF21125S) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF21125 MRF21125S MRF21125SR3 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF21125 MRF21125S MRF21125SR3 12 MOTOROLA RF DEVICE DATA MRF21125/D ...

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