MRF3866R1 MICROSEMI [Microsemi Corporation], MRF3866R1 Datasheet
MRF3866R1
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MRF3866R1 Summary of contents
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2 500 MHZ • Gain at Optimum Noise Figure = 15 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective ...
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ELECTRICAL SPECIFICATIONS (Tcase = 25 STATIC (off) Symbol BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc BVCBO Collector-Base Breakdown Voltage (IC = 1.0 mAdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc ...
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FUNCTIONAL Symbol Noise Figure (50ohms mAdc, VCE = 10 Vdc 0.5 GHz) G Power Gain @ NFmin NF ( mAdc, VCE = 10 Vdc 0.5 GHz) G Maximum Unilateral Gain ...
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C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C7, C10 — 10 µF, Tantalum Capacitor RFC — VK–200, Ferroxcube TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL3 — Microstrip 0.162, x 0.800, TL5 — Microstrip 0.120, ...
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RF Low Power PA, LNA, and General Purpose Discrete Selector Guide SO-8 MRF4427, R2 NPN 175 0.15 TO-39 2N4427 NPN 175 POWER MACRO MRF553 NPN 175 POWER MACRO MRF553T NPN 175 TO-39 MRF607 NPN 175 1.75 TO-39 2N6255 NPN 175 ...
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PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct MRF581 MRF581G MRF581A ...