MRF5S19100HD MOTOROLA [Motorola, Inc], MRF5S19100HD Datasheet

MRF5S19100HD

Manufacturer Part Number

MRF5S19100HD

Description

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

MOTOROLA [Motorola, Inc]

Datasheet

1.MRF5S19100HD.pdf (12 pages)

Current page: 1 of 12
Download datasheet (727Kb)



MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical 2 - Carrier N - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

REV 2

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .

Motorola, Inc. 2004

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications with frequencies up to

Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 75°C, 100 W CW

Case Temperature 70°C, 22 W CW

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Power Gain — 13.9 dB

Drain Efficiency — 25.5%

IM3 @ 2.5 MHz Offset — - 36.5 dBc @ 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — - 50.7 dBc @ 30 kHz Channel Bandwidth

= 1000 mA, P

out

= 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot,

= 25°C

Freescale Semiconductor, Inc.

Characteristic

For More Information On This Product,

Rating

Operation

µ″ Nominal.

Go to: www.freescale.com

= 28 Volts,

Symbol

DSS

θJC

stg

MRF5S19100HR3 MRF5S19100HSR3

MRF5S19100HSR3

CASE 465- 06, STYLE 1

CASE 465A - 06, STYLE 1

MRF5S19100HR3

MRF5S19100HSR3

1990 MHz, 22 W AVG, 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780

NI - 780S

- 65 to +150

2 x N - CDMA

Value (1)

- 0.5, +15

Value

1.54

0.64

0.65

269

200

Order this document

by MRF5S19100H/D

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF5S19100HD

MRF5S19100HD Summary of contents

Page 1

... MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance: V ...

Page 2

Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate ...

Page 3

Freescale Semiconductor, Inc. V BIAS + INPUT C1 C15 C16 Z1, Z3 0.140″ x 0.080″ Microstrip Z2 0.450″ x 0.080″ Microstrip Z4 0.525″ x 0.080″ Microstrip Z5 0.636″ x 0.141″ ...

Page 4

Freescale Semiconductor, Inc C16 C15 Figure 2. MRF5S19100HR3(HSR3) Test Circuit Component Layout MRF5S19100HR3 MRF5S19100HSR3 4 MRF5S19100 Rev C11 R3 W1 For More Information On This Product, Go to: ...

Page 5

Freescale Semiconductor, Inc η IRL 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 10 9 IM3 8 1.2288 MHz Channel Bandwidth Peak/Avg 0.01% Probability (CCDF) 7 ACPR 6 5 ...

Page 6

Freescale Semiconductor, Inc Vdc 1000 1958.75 MHz 1961.25 MHz N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth 25 Peak/Avg 0.01% ...

Page 7

Freescale Semiconductor, Inc 1990 MHz f = 1930 MHz Z source Z load Input Matching Network Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product Ω Z ...

Page 8

Freescale Semiconductor, Inc. MRF5S19100HR3 MRF5S19100HSR3 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF5S19100HR3 MRF5S19100HSR3 9 ...

Page 10

Freescale Semiconductor, Inc. MRF5S19100HR3 MRF5S19100HSR3 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

Freescale Semiconductor, Inc (FLANGE) D bbb (INSULATOR) bbb N (LID) ccc (FLANGE (FLANGE ...

Page 12

Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits ...

Related keywords

MRF5S19100HD datasheet
MRF5S19100HD data sheet
MRF5S19100HD pdf datasheet
MRF5S19100HD component
MRF5S19100HD part
MRF5S19100HD distributor
MRF5S19100HD RoHS
MRF5S19100HD datasheet download