MRF5S19150 MOTOROLA [Motorola, Inc], MRF5S19150 Datasheet

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MRF5S19150

Manufacturer Part Number
MRF5S19150
Description
RF Power Field Effect Transistors
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
• Excellent Thermal Stability
• Qualified Up to a Maximum of 32 V Operation
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 1
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications at frequencies from
P
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
100 Watts CW Output Power
access the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
Derate above 25°C
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 32 W CW
out
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — - 50 dB
IM3 — - 36.5 dBc
= 32 Watts, I
DQ
= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
C
= 25°C
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
Go to: www.freescale.com
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
CW
P
DSS
T
θJC
stg
MRF5S19150SR3
GS
D
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
J
MRF5S19150R3
MRF5S19150R3 MRF5S19150SR3
MRF5S19150SR3
MRF5S19150R3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
1990 MHz, 32 W, 28 V
NI - 880
- 65 to +150
Value (1,2)
- 0.5, +15
Value
0.49
0.53
357
200
100
65
2
Order this document
by MRF5S19150/D
Watts
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF5S19150 Summary of contents

Page 1

... For More Information On This Product Volts, DD Symbol V DSS Symbol R Go to: www.freescale.com Order this document by MRF5S19150/D MRF5S19150R3 MRF5S19150SR3 1990 MHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF5S19150R3 CASE 465C - 02, STYLE 880S MRF5S19150SR3 Value Unit 65 Vdc - 0 ...

Page 2

... Bandwidth 885 MHz and f2 +885 MHz) Input Return Loss ( Vdc Avg 1400 mA 1930 MHz, DD out 1932.5 MHz and f1 = 1987.5 MHz 1990 MHz) (1) Part is internally matched both on input and output. MRF5S19150R3 MRF5S19150SR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS ...

Page 3

... Z6 0.557″ x 1.030″ x 0.237″ Microstrip Taper Z7 0.103″ x 1.030″ Microstrip Z8 1.280″ x 0.046″ Microstrip Figure 1. MRF5S19150 Test Circuit Schematic Table 1. MRF5S19150 Test Circuit Component Designations and Values Part B1 C4, C5, C13, C14, C24, C25 C8, C10 C6, C12, C16, C17, C18, C27, C28, C29 ...

Page 4

... Freescale Semiconductor, Inc C10 B2 MRF5S19150 Rev 4 Figure 2. MRF5S19150 Test Circuit Component Layout MRF5S19150R3 MRF5S19150SR3 4 C17 C18 C14 R3 C5 C15 C12 C11 C26 C13 R4 C25 C28 C29 For More Information On This Product, Go to: www.freescale.com C19 C20 ...

Page 5

... DQ 1700 mA 1400 mA 1050 mA 10 100 P , OUTPUT POWER (WATTS) PEP out Output Power P3dB = 53.71 dBm (234. Vdc 1400 Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz INPUT POWER (dBm) in Input Power MRF5S19150R3 MRF5S19150SR3 45 5 ...

Page 6

... Integrated BW Integrated BW −80 −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 f, FREQUENCY (MHz) Figure Carrier N - CDMA Spectrum MRF5S19150R3 MRF5S19150SR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 1400 OUTPUT POWER (WATTS) AVG., N−CDMA out 9 10 +IM3 @ 8 10 1.2288 MHz ...

Page 7

... W Avg out source load MHz Ω Ω 1930 1.89 - j5.24 1.06 - j1.58 1960 1.64 - j5.29 0.88 - j1.37 1990 1.3 - j5.49 0.90 - j1.21 = Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network Z Z source load Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF5S19150R3 MRF5S19150SR3 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF5S19150R3 MRF5S19150SR3 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF5S19150R3 MRF5S19150SR3 11 ...

Page 12

... E Motorola Inc. 2004 HOW TO REACH US: USA / EUROPE / LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF5S19150R3 MRF5S19150SR3 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...

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