MRF5S19150HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF5S19150HR3_08 Datasheet

MRF5S19150HR3_08

Manufacturer Part Number

MRF5S19150HR3_08

Description

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF5S19150HR3_08.pdf (10 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical 2 - Carrier N - CDMA Performance for V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation @ T

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications at frequencies from

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

1400 mA, Avg., P

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 32 W CW

Power Gain — 14 dB

Drain Efficiency — 26%

IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — - 50 dB in 30 kHz Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

out

= 25°C

= 32 Watts Avg., f = 1990 MHz, IS - 95 CDMA

= 25°C

Characteristic

Rating

″ Nominal.

= 28 Volts, I

Symbol

DSS

θJC

stg

Document Number: MRF5S19150H

1930- 1990 MHz, 32 W AVG., 28 V

MRF5S19150HR3

LATERAL N - CHANNEL

CASE 465B - 03, STYLE 1

RF POWER MOSFET

- 65 to +150

Value

2 x N - CDMA

- 0.5, +65

- 0.5, +15

Value

2.44

0.76

0.41

0.44

427

150

200

120

NI - 880

(1,2)

MRF5S19150HR3

Rev. 4, 10/2008

W/°C

°C/W

Unit

Vdc

°C

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MRF5S19150HR3_08 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ...

Page 2

Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero ...

Page 3

BIAS + INPUT C10 C11 Z1 1.023″ x 0.082″ Microstrip Z2 0.398″ x 0.082″ Microstrip Z3 0.203″ x 0.082″ Microstrip Z4 0.074″ x ...

Page 4

C10 B2 MRF5S19150 Rev 4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the ...

Page 5

G ps η IRL 9 IM3 8 7 ACPR 6 5 1900 Figure Carrier N - CDMA Broadband Performance 2100 1700 mA 1400 mA ...

Page 6

Vdc 1400 1958.75 MHz 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth 35 PAR = 9 0.01% Probability (CCDF ...

Page 7

MHz Z load f = 1930 MHz f = 1930 MHz Figure 11. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω source f = 1990 MHz V = ...

Page 8

(FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE) MRF5S19150HR3 ...

Page 9

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 10

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 480- 768- 2130 ...

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