MRF5S21045NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF5S21045NR1_09 Datasheet

MRF5S21045NR1_09

Manufacturer Part Number

MRF5S21045NR1_09

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF5S21045NR1_09.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

• Typical 2-Carrier W-CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Freescale Semiconductor

Technical Data

Drain-Source Voltage

Gate-Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for W- CDMA base station applications with frequencies from 2110

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 80°C, 45 W CW

Case Temperature 79°C, 10 W CW

out

Power Gain — 14.5 dB

Drain Efficiency — 25.5%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

= 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

= 25°C

Characteristic

Rating

Operation

= 28 Volts, I

= 500 mA,

Symbol

DSS

θJC

stg

Document Number: MRF5S21045N

CASE 1486-03, STYLE 1

CASE 1484-04, STYLE 1

MRF5S21045NR1 MRF5S21045NBR1

2110-2170 MHz, 10 W AVG., 28 V

MRF5S21045NBR1

MRF5S21045NR1

TO-270 WB-4

TO-272 WB-4

LATERAL N-CHANNEL

RF POWER MOSFETs

PLASTIC

-65 to +150

Value

2 x W-CDMA

-0.5, +68

-0.5, +15

Value

0.74

1.35

1.48

130

200

(1,2)

Rev. 4.1, 12/2009

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF5S21045NR1_09

MRF5S21045NR1_09 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications used in Class AB for PCN- PCS/cellular radio and WLL applications. ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics (T Characteristic Off ...

Page 3

R1 V BIAS INPUT C7 C8 Z1, Z9 0.250″ x 0.080″ Microstrip Z2 0.987″ x 0.080″ Microstrip Z3 0.157″ x 0.080″ Microstrip Z4 0.375″ x 0.080″ Microstrip Z5 0.480″ x 1.000″ Microstrip Z6 0.510″ ...

Page 4

R1 C7 Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout MRF5S21045NR1 MRF5S21045NBR1 C13 C14 C15 C6 C10 C11 C12 MRF5S21045N Rev Device Data Freescale Semiconductor ...

Page 5

G 14.4 14.2 14 13.8 IM3 13.6 ACPR 13.4 2060 2080 Figure 3. 2-Carrier W-CDMA Broadband Performance @ P 14.8 14.6 14.4 14 13.8 13.6 IRL 13.4 IM3 13.2 ACPR 13 2060 2080 ...

Page 6

Order - 5th Order -4 5 7th Order - Vdc (PEP 500 mA DD out Two-Tone Measurements (f1 + ...

Page 7

Figure 12. MTTF Factor versus Junction Temperature 100 10 1 0.1 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ $5 MHz Offset. IM3 Measured in 0.01 3.84 MHz Bandwidth @ ...

Page 8

Z Z Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 Ω 2200 MHz f = 2000 MHz Z load f = 2000 MHz f = 2200 MHz Vdc, ...

Page 9

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S21045NR1 MRF5S21045NBR1 9 ...

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MRF5S21045NR1 MRF5S21045NBR1 10 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 11 ...

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MRF5S21045NR1 MRF5S21045NBR1 12 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 13 ...

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MRF5S21045NR1 MRF5S21045NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting ...

Page 16

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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