MRF6S23100HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF6S23100HR3_06 Datasheet

MRF6S23100HR3_06

Manufacturer Part Number

MRF6S23100HR3_06

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6S23100HR3_06.pdf (12 pages)

Current page: 1 of 12
Download datasheet (426Kb)

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

• Typical 2 - Carrier W - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Freescale Semiconductor

Technical Data

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 2300 to

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Applications

Derate above 25°C

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 20 W CW

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

out

Power Gain — 15.4 dB

Drain Efficiency — 23.5%

IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth

= 20 Watts Avg., Full Frequency Band, Channel Bandwidth =

= 25°C

Characteristic

Rating

Operation

″ Nominal.

= 28 Volts, I

= 1000 mA,

Symbol

DSS

θJC

stg

Document Number: MRF6S23100H

CASE 465A - 06, STYLE 1

MRF6S23100HR3 MRF6S23100HSR3

2300 - 2400 MHz, 20 W AVG., 28 V

CASE 465 - 06, STYLE 1

MRF6S23100HSR3

MRF6S23100HR3

MRF6S23100HSR3

MRF6S23100HR3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780S

NI - 780

- 65 to +150

Value

2 x W - CDMA

- 0.5, +68

- 0.5, +12

Value

0.53

0.59

330

150

200

1.9

(1,2)

Rev. 1, 5/2006

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF6S23100HR3_06

MRF6S23100HR3_06 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications used in Class AB and Class C for WLL applications. ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Related keywords

MRF6S23100HR3_06 datasheet
MRF6S23100HR3_06 data sheet
MRF6S23100HR3_06 pdf datasheet
MRF6S23100HR3_06 component
MRF6S23100HR3_06 part
MRF6S23100HR3_06 distributor
MRF6S23100HR3_06 RoHS
MRF6S23100HR3_06 datasheet download

MRF6S23100HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF6S23100HR3_06 Datasheet

MRF6S23100HR3_06

Related parts for MRF6S23100HR3_06

MRF6S23100HR3_06 Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Page 10

Page 11

Page 12

Related keywords