MRF6S24140HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S24140HR3_08 Datasheet
MRF6S24140HR3_08
Related parts for MRF6S24140HR3_08
MRF6S24140HR3_08 Summary of contents
Page 1
... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 2450 MHz 140 Watts out Power Gain — ...
Page 2
Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...
Page 3
BIAS + + C10 INPUT C12 + + C11 C14 C13 Z1 0.678″ x 0.068″ Microstrip Z2 0.466″ x 0.068″ Microstrip Z3 0.785″ x 0.200″ Microstrip Z4 0.200″ x 0.530″ ...
Page 4
R1 C10 C9 C8* C1 C14 + + C13 C12* * Stacked Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz MRF6S24140HR3 MRF6S24140HSR3 C7 C11* C17 + C15 C18 C16 ...
Page 5
TYPICAL CHARACTERISTICS — 2450 MHz versus CW Output Power as a Function of V 14.5 14 13.5 13 12 1200 mA 1400 1000 mA 1100 ...
Page 6
Figure 7. Series Equivalent Source and Load Impedance MRF6S24140HR3 MRF6S24140HSR3 2450 MHz Z source = 10 Ω 2450 MHz Z load Vdc 1200 mA 140 W ...
Page 7
(FLANGE bbb bbb ccc (FLANGE (FLANGE bbb ...
Page 8
Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...
Page 9
How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 480 ...