MRF6S9160HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S9160HR3_08 Datasheet

MRF6S9160HR3_08

Manufacturer Part Number

MRF6S9160HR3_08

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6S9160HR3_08.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V

GSM EDGE Application

• Typical GSM EDGE Performance: V

GSM Application

• Typical GSM Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device

Migration PCN12895 for more details.

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for N - CDMA, GSM and GSM EDGE base station applications

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

160 Watts, Full Frequency Band (921 - 960 MHz)

Output Power

Case Temperature 81°C, 160 W CW

Case Temperature 73°C, 35 W CW

out

Power Gain — 20.9 dB

Drain Efficiency — 30.5%

ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth

MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

Power Gain — 20 dB

Drain Efficiency — 45%

Spectral Regrowth @ 400 kHz Offset = - 66 dBc

Spectral Regrowth @ 600 kHz Offset = - 75 dBc

EVM — 2% rms

Power Gain — 20 dB

Drain Efficiency — 58%

= 1200 mA, P

= 76 Watts Avg., Full Frequency Band (865 - 895 MHz)

out

= 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

(1,2)

Characteristic

= 28 Volts, I

Rating

Operation

= 28 Volts, I

= 1200 mA, P

= 1200 mA,

out

= 28 Volts,

Symbol

DSS

θJC

stg

CASE 465A - 06, STYLE 1

CASE 465 - 06, STYLE 1

Document Number: MRF6S9160H

MRF6S9160HSR3

MRF6S9160HR3 MRF6S9160HSR3

MRF6S9160HR3

MRF6S9160HSR3

MRF6S9160HR3

880 MHz, 35 W AVG., 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780

NI - 780S

SINGLE N - CDMA

- 65 to +150

Value

- 0.5, +68

- 0.5, +12

Value

0.31

0.33

150

225

(2,3)

Rev. 2, 8/2008

°C/W

Unit

Vdc

°C

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