MRF6V12500HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V12500HR3_10 Datasheet

MRF6V12500HR3_10

Manufacturer Part Number

MRF6V12500HR3_10

Description

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6V12500HR3_10.pdf (13 pages)

Current page: 1 of 13
Download datasheet (2Mb)

RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

between 960 and 1215 MHz. These devices are suitable for use in pulsed

applications.

• Typical Pulsed Performance: V

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 50 V

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

RF Power transistors designed for applications operating at frequencies

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Pulsed Width = 128 μsec, Duty Cycle = 10%

Power

Operation

Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle

calculators by product.

Select Documentation/Application Notes -- AN1955.

Application

Narrowband

Broadband

500 Peak

(W)

out

(1,2)

Characteristic

Rating

= 50 Volts, I

960--1215

(MHz)

1030

Operation

(dB)

19.7

18.5

= 200 mA,

62.0

57.0

(%)

Symbol

DSS

θJC

stg

Document Number: MRF6V12500H

MRF6V12500HR3 MRF6V12500HSR3

MRF6V12500HSR3

CASE 465- -06, STYLE 1

MRF6V12500HR3

CASE 465A- -06, STYLE 1

960- -1215 MHz, 500 W, 50 V

MRF6V12500HR3

MRF6V12500HSR3

LATERAL N- -CHANNEL

RF POWER MOSFETs

NI- -780

NI- -780S

-- 65 to +150

--0.5, +110

Value

--6.0, +10

Value

0.044

PULSED

150

225

(2,3)

Rev. 2, 9/2010

°C/W

Unit

Vdc

°C

Related parts for MRF6V12500HR3_10

MRF6V12500HR3_10 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance Volts Pulsed Width = 128 μsec, Duty Cycle = 10% ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Gate--Source Leakage Current ( Vdc Vdc) ...

Page 3

R3 V BIAS INPUT C11 C10 Z1 0.457″ x 0.080″ Microstrip Z2 0.250″ x 0.080″ Microstrip Z3 0.605″ x 0.040″ Microstrip Z4 0.080″ x 0.449″ Microstrip Z5 0.374″ x ...

Page 4

MRF6V12500H Rev C11 C10 R4 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 C14 C12 C15 C13 C2 C16 RF Device Data Freescale Semiconductor ...

Page 5

Measured with ±30 mV(rms) MHz Vdc 0 DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 3. Capacitance versus Drain- -Source Voltage ...

Page 6

Vdc, I 100 DD DQ Pulse Width = 128 μsec, Duty Cycle = 10 INPUT POWER (dBm) PULSED in Figure 9. Pulsed Output ...

Page 7

Ω o Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor 1030 MHz load f = 1030 MHz Z source Vdc 200 mA ...

Page 8

MRF6V12500 Rev Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960- -1215 MHz Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960- -1215 MHz Part C1 2.2 pF Chip Capacitor C2 0.2 ...

Page 9

TYPICAL CHARACTERISTICS 900 Figure 14. Pulsed Power Gain, Drain Efficiency and IRL Pulse Width = 128 μsec Duty Cycle = 10 ...

Page 10

MHz Figure 16. Series Equivalent Source and Load Impedance — 960- -1215 MHz MRF6V12500HR3 MRF6V12500HSR3 1215 MHz Z source Z load f = 960 MHz f = 960 MHz Vdc, I ...

Page 11

(FLANGE) D bbb (FLANGE (FLANGE (LID (FLANGE) D bbb ...

Page 12

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices ...

Page 13

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

Related keywords

MRF6V12500HR3_10 datasheet
MRF6V12500HR3_10 data sheet
MRF6V12500HR3_10 pdf datasheet
MRF6V12500HR3_10 component
MRF6V12500HR3_10 part
MRF6V12500HR3_10 distributor
MRF6V12500HR3_10 RoHS
MRF6V12500HR3_10 datasheet download